Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device,Advanced Electronic Materials

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Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-12-17 , DOI: 10.1002/aelm.201900754
Yuanyuan Zhu _{1,

2} , Pengwei Cheng ₁ , Jing Shi ₁ , Hongjun Wang ₂ , Yong Liu ₁ , Rui Xiong ₁ , Hongyu Ma ₁ , Hongxiang Ma ₁

Affiliation

All‐inorganic halide perovskites have attracted a great deal of attention for applications in resistive switching (RS) memory devices due to their superior stability compared to organic–inorganic hybrid halide perovskites. RS memory devices utilizing air‐stable all‐inorganic halide perovskite cesium lead bromide (CsPbBr₃) film as the switching layer, which are successfully prepared by spin coating at low temperature, are demonstrated. Memory devices based on CsPbBr₃ film exhibit typical reproducible bipolar RS behavior and superior switching characteristics, including the high ON/OFF ratio (≈10⁴), long data retention (>5 × 10⁴ s), and environmental stability. In addition, multilevel storage capability can be achieved through controlling the different compliance currents. The formation and rupture of bromine (Br) vacancy conducting filaments (CFs) is proposed to explain the switching behavior in the Pt‐anode‐based memory devices, which is verified by XPS depth‐profiling analysis. Moreover, the coexistence of Br vacancies and Ag metallic CFs is suggested to be responsible for the switching behavior in Ag‐anode based device. These results demonstrate that the all‐inorganic halide perovskite CsPbBr₃ film will be the promising switching material for nonvolatile memory devices.

中文翻译：

全无机钙钛矿基于CsPbBr3薄膜的存储设备中溴空位的重新分布和金属离子迁移引起的空气稳定的电阻切换行为

与有机-无机杂化卤化物钙钛矿相比，全无机卤化物钙钛矿具有出色的稳定性，因此在电阻开关（RS）存储设备中的应用引起了广泛的关注。展示了采用低温稳定的全无机卤化钙钛矿型溴化铯铯铅（CsPbBr ₃）膜作为转换层的RS存储设备。基于CsPbBr存储器装置₃薄膜显示出典型再现的双极RS行为和优异的开关特性，包括高的ON / OFF比（≈10 ⁴），长数据保留（> 5×10 ⁴s），环境稳定。此外，可以通过控制不同的遵从电流来实现多级存储功能。提出了溴（Br）空位传导丝（CFs）的形成和破裂，以解释基于Pt阳极的存储设备中的开关行为，该行为已通过XPS深度剖析分析得到验证。此外，建议Br空位和Ag金属CF的共存是造成基于Ag阳极的器件的开关行为的原因。这些结果表明，全无机卤化物钙钛矿CsPbBr ₃膜将成为非易失性存储器件的有前途的开关材料。

更新日期：2020-02-13

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