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Electrochemical Performance of Nanocrystalline Vanadium Pentoxide Thin Films Grown by RF Magnetron Sputtering
Journal of Electronic Materials ( IF 2.2 ) Pub Date : 2019-12-17 , DOI: 10.1007/s11664-019-07878-0
M. Dhananjaya , N. Guru Prakash , A. Lakshmi Narayana , O. M. Hussain

Nanocrystalline V2O5 thin films were prepared by radio frequency (RF) magnetron sputtering and explored as potential electrodes for Li-ion microbatteries and supercapacitors based on microstructure and electrochemical properties. All the films grown in the substrate temperature (Ts) range 250–350°C exhibited predominant (001) orientation corresponding to the orthorhombic V2O5 layered structure. However, notable changes were observed in the surface morphology and crystallite size of the grown films by varying the substrate temperature. The films deposited at Ts of 250°C showed uniformly distributed spherical grain morphology and demonstrated pseudocapacitive behavior with a specific capacitance of 960 mF cm−2 at current density of 1 mA cm−2 with good cycle stability. The films deposited at Ts of 350°C showed needle like nanorod structure with an average crystallite size of 36 nm. These films exhibited sharp oxidation and reduction peaks, exhibiting cathodic behavior with a discharge capacity of 62.6 μAh cm−2 μm−1 at a current rate of 50 μA.

中文翻译:

射频磁控溅射生长纳米五氧化二钒薄膜的电化学性能

通过射频(RF)磁控溅射制备了纳米晶V 2 O 5薄膜,并根据其微观结构和电化学性质将其用作锂离子微电池和超级电容器的潜在电极。在基材温度(T s)为250-350°C的范围内生长的所有薄膜均显示出主要的(001)取向,对应于正交V 2 O 5层状结构。然而,通过改变基板温度,观察到生长膜的表面形态和微晶尺寸的显着变化。在T s沉积的薄膜250°C的温度显示出均匀分布的球形晶粒形态,并且在电流密度为1 mA cm -2时具有960 mF cm -2的比电容,显示出伪电容行为,并具有良好的循环稳定性。在350℃的T s下沉积的膜显示出针状纳米棒结构,平均微晶尺寸为36nm。这些膜显示出急剧的氧化和还原峰,显示出阴极行为与62.6μAh厘米的放电容量-2 微米-1在50μA的电流速率。
更新日期:2019-12-18
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