Abstract Two 75 mm 4H-SiC single crystals are grown by the physical vapor transport (PVT) technique, using different insulation materials. The insulation material of higher thermal conductivity led to an increased radial temperature gradient. The evolution of the growth front was monitored using the in-situ computed tomography (CT). A slightly bent growth interface and a bigger facet are formed during the growth applying a lower radial temperature gradient while a smaller facet and steeper crystal flanks are formed in the case of the larger radial temperature gradient. Micropipes are deflected laterally by large surface steps on the steep crystal flanks and a reduction of threading edge dislocations by 60% is revealed by KOH defect etching.

中文翻译：

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生长界面形状对4H-SiC单晶晶面区缺陷特性的影响

摘要 通过物理蒸汽传输 (PVT) 技术，使用不同的绝缘材料生长了两个 75 mm 4H-SiC 单晶。更高导热率的绝缘材料导致径向温度梯度增加。使用原位计算机断层扫描 (CT) 监测生长前沿的演变。在施加较低径向温度梯度的生长过程中形成略微弯曲的生长界面和较大的晶面，而在较大径向温度梯度的情况下形成较小的晶面和更陡峭的晶体侧面。微管通过陡峭的晶体侧面上的大表面台阶横向偏转，并且通过 KOH 缺陷蚀刻显示螺纹边缘位错减少了 60%。