Semiconductor heterostructures are intrinsic to a wide range of modern‐day electronic devices, such as computers, light‐emitting devices, and photodetectors. Knowledge of chemical interfacial profiles in these structures is critical to the task of optimizing the device performance. This work presents an analysis of the composition profile and strain across the noncommon‐atom heterovalent CdTe/InSb interface, carried out using a combination of electron microscopy imaging techniques. Because of the close atomic numbers of the constituent elements, techniques such as high‐angle annular‐dark‐field and large‐angle bright‐field scanning transmission electron microscopy, as well as electron energy‐loss spectroscopy, give results from the interface region that are inherently difficult to interpret. By contrast, use of the 002 dark‐field imaging technique emphasizes the interface location by comparing differences in structure factors between the two materials. Comparisons of experimental and simulated CdTe‐on‐InSb profiles reveal that the interface is structurally abrupt to within about 1.5 nm (10–90% criterion), while geometric phase analysis based on aberration‐corrected electron microscopy images reveals a minimal level of interfacial strain. The present investigation opens new routes to the systematic investigation of heterovalent interfaces, formed by the combination of other valence‐mismatched material systems.

中文翻译：

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分析非常见原子异质界面的策略：以CdTe-on-InSb为例

半导体异质结构是各种现代电子设备（例如计算机，发光设备和光电探测器）所固有的。这些结构中的化学界面分布图的知识对于优化器件性能的任务至关重要。这项工作结合了电子显微镜成像技术，对非共原子杂价CdTe / InSb界面上的成分分布和应变进行了分析。由于构成元素的原子序数接近，因此，高角度环形暗场和大角度明场扫描透射电子显微镜以及电子能量损失谱等技术可从界面区域得出以下结果：本质上难以解释。相比之下，002暗场成像技术的使用通过比较两种材料之间的结构因子差异来强调界面位置。实验和模拟CdTe-on-InSb剖面的比较表明，该界面在1.5 nm左右（标准为10-90％的标准）内结构突变，而基于像差校正电子显微镜图像的几何相分析揭示了最小程度的界面应变。本研究为系统化研究异价界面开辟了新的途径，该界面是由其他价态不匹配的物质系统的组合所形成的。5 nm（10–90％的标准），而基于像差校正电子显微镜图像的几何相位分析显示了最小的界面应变。本研究为系统化研究异价界面开辟了新途径，该界面是由其他价态不匹配的材料系统的组合形成的。5 nm（10–90％的标准），而基于像差校正电子显微镜图像的几何相位分析显示了最小的界面应变。本研究为系统化研究异价界面开辟了新的途径，该界面是由其他价态不匹配的物质系统的组合所形成的。