An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor,Advanced Electronic Materials

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An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-12-15 , DOI: 10.1002/aelm.201900858
Lei Zhao _{1,

2} , Zhen Fan _{1,

2} , Shengliang Cheng ₁ , Lanqing Hong ₃ , Yongqiang Li ₄ , Guo Tian ₁ , Deyang Chen ₁ , Zhipeng Hou ₁ , Minghui Qin ₁ , Min Zeng ₁ , Xubing Lu ₁ , Guofu Zhou _{2,

5} , Xingsen Gao ₁ , Jun‐Ming Liu _{1,

4}

Affiliation

The rapid development of artificial intelligence technology has led to the urge for artificial optoelectronic synapses with visual perception and memory capabilities. A new type of artificial optoelectronic synapse, namely a photoelectric memcapacitor, is proposed and demonstrated. This photoelectric memcapacitor, with a planar Au/La_1.875Sr_0.125NiO₄/Au metal–semiconductor–metal structure, displays a complementary optical and electrical modulation of capacitance, which can be attributed to the charge trapping/detrapping‐induced Schottky barrier variation. It further exhibits versatile synaptic functions, such as photonic potentiation/electric depression, paired‐pulse facilitation, short‐/long‐term memory, and “learning‐experience” behavior. Moreover, the photoplasticity of the memcapacitor can be modulated by varying the frequency of applied AC voltage, thus enabling self‐adaptive optical signal detection and mimicry of interest‐modulated human visual memory. Therefore, it represents a new paradigm for artificial optoelectronic synapses and opens up opportunities for developing low‐power humanoid optoelectronic devices.

中文翻译：

基于光电薄膜电容器的人工光电突触

人工智能技术的飞速发展导致了对具有视觉感知和记忆功能的人造光电子突触的需求。提出并证明了一种新型的人造光电子突触，即光电薄膜电容器。该光电薄膜电容器具有平面Au / La _1.875 Sr _0.125 NiO ₄/ Au金属-半导体-金属结构显示出电容的互补光和电调制，这可以归因于电荷俘获/去俘获引起的肖特基势垒变化。它还具有多种突触功能，例如光子增强/电抑制，成对脉冲促进，短期/长期记忆和“学习经历”行为。此外，可以通过改变施加的交流电压的频率来调节薄膜电容器的光塑性，从而实现自适应光信号检测和模拟感兴趣的人类视觉记忆。因此，它代表了人工光电突触的新范例，并为开发低功率人形光电器件开辟了机遇。

更新日期：2020-02-13

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