Electrical tunability of the \(g\)-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective \(g\)-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.

受限自旋的\（g \）因子的电可调性是自旋量子位场的长期目标。在这里，我们利用电偶极子自旋共振（EDSR）在封闭孔的门控GaAs双点器件中进行了演示。这种可调性是GaAs价带中强大的自旋轨道相互作用（SOI）的结果。SOI可以实现自旋翻转点隧穿，其与简单的自旋守恒电荷传输结合可形成可调谐的杂化自旋轨道分子态。EDSR用于证明分隔两个最低能态的间隙根据点间失谐或磁场的变化将其特性从类电荷激发变为类自旋激发。在自旋状态下，间隙的特征在于有效\（g \）由于自旋电荷杂交，该因子不同于体值，并且可以通过栅极电压平滑而灵敏地进行调谐。