Black silicon back‐contact module with wide light acceptance angle,Progress in Photovoltaics

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Black silicon back‐contact module with wide light acceptance angle
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2019-12-11 , DOI: 10.1002/pip.3231
Pablo Ortega ₁ , Moises Garín _{1,

2} , Guillaume Gastrow ₃ , Tuukka Savisalo ₄ , Antti Tolvanen ₅ , Henri Vahlman ₅ , Ville Vähänissi ₆ , Toni P. Pasanen ₆ , David Carrió ₁ , Hele Savin ₆ , Ramón Alcubilla ₁

Affiliation

In this work, a photovoltaic mini‐module combining interdigitated back‐contacted solar cells with black silicon in the front was implemented as a proof of concept. The module consists of nine solar cells connected in series with an active area of 86.5 cm². Both the assembly and panel encapsulation were made using industrial back‐contact module technology. Noticeable photovoltaic efficiencies of 18.1% and 19.9% of the whole module and the best individual cell of the module, respectively, demonstrate that fragile nanostructures can withstand standard module fabrication stages. Open‐circuit voltage and fill factor values of 5.76 V and 81.6%, respectively, reveal that series interconnection between cells works as expected, confirming a good ohmic contact between cell busbars and the conductive backsheet. Additionally, the excellent quasi‐omnidirectional antireflection properties of black silicon surfaces prevail at module level, as it is corroborated by light incidence angle dependence measurements of the short‐circuit current parameter.

中文翻译：

黑色硅背接触模块，具有宽广的受光角

在这项工作中，实现了将交叉指型背接触式太阳能电池与正面的黑硅相结合的光伏微型模块，作为概念验证。该模块由九个串联的太阳能电池组成，有效面积为86.5 cm ²。组装和面板封装均使用工业背接触模块技术进行。整个模块和模块中最好的单个电池的显着光伏效率分别为18.1％和19.9％，这表明脆弱的纳米结构可以承受标准的模块制造阶段。开路电压和填充因数分别为5.76 V和81.6％，表明电池之间的串联互连按预期工作，确认了电池母线与导电底片之间的良好欧姆接触。此外，由于短路电流参数的光入射角相关性测量值证实了黑硅表面优异的准全向抗反射特性，因此在模块级具有很高的准全反射性。

更新日期：2019-12-11

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