In this work, a high-density hydrogen (HDH) treatment is proposed to reduce interface traps and enhance the efficiency of the passivated emitter rear contact (PERC) device. The hydrogen gas is compressed at pressure (~ 70 atm) and relatively low temperature (~ 200 °C) to reduce interface traps without changing any other part of the device's original fabrication process. Fourier-transform infrared spectroscopy (FTIR) confirmed the enhancement of Si-H bonding and secondary-ion mass spectrometry (SIMS) confirmed the SiN/Si interface traps after the HDH treatment. In addition, electrical measurements of conductance-voltage are measured and extracted to verify the interface trap density (Dit). Moreover, short circuit current density (Jsc), series resistance (Rs), and fill factor (F.F.) are analyzed with a simulated light source of 1 kW M-2 global AM1.5 spectrum to confirm the increase in cell efficiency. External quantum efficiency (EQE) is also measured to confirm the enhancement in conversion efficiency between different wavelengths. Finally, a model is proposed to explain the experimental result before and after the treatment.

中文翻译：

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通过高密度氢处理减少界面陷阱，以提高钝化发射极后接触电池的效率。

在这项工作中，提出了一种高密度氢（HDH）处理方法，以减少界面陷阱并提高钝化发射极后接触（PERC）器件的效率。氢气在压力（〜70 atm）和相对较低的温度（〜200°C）下被压缩，以减少界面陷阱，而无需更改设备原始制造工艺的任何其他部分。傅里叶变换红外光谱（FTIR）证实了Si-H键的增强，二次离子质谱（SIMS）证实了HDH处理后的SiN / Si界面陷阱。另外，电导电压的电测量值被测量并提取以验证界面陷阱密度（Dit）。此外，短路电流密度（Jsc），串联电阻（Rs）和填充系数（FF）用1 kW M-2全球AM1.5光谱的模拟光源进行分析，以确认电池效率的提高。还测量了外部量子效率（EQE），以确认不同波长之间转换效率的提高。最后，提出了一个模型来解释治疗前后的实验结果。