Large‐Scale Fabrication of Highly Emissive Nanodiamonds by Chemical Vapor Deposition with Controlled Doping by SiV and GeV Centers from a Solid Source,Advanced Materials Interfaces

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Large‐Scale Fabrication of Highly Emissive Nanodiamonds by Chemical Vapor Deposition with Controlled Doping by SiV and GeV Centers from a Solid Source
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2019-12-12 , DOI: 10.1002/admi.201901408
Mary De Feudis _{1,

2} , Alexandre Tallaire ₃ , Louis Nicolas ₄ , Ovidiu Brinza ₂ , Philippe Goldner ₃ , Gabriel Hétet ₄ , Fabien Bénédic ₂ , Jocelyn Achard ₂

Affiliation

A new strategy to produce loose chemical vapor deposited nanodiamonds (ND) without the need of a seeded substrate, and that are intentionally doped by silicon vacancy and GeV centers from a solid source is presented. The addition of a low amount of gases such as N₂ or O₂ during growth is used as a control knob to finely tune the emission intensity of embedded color centers. NDs with a high brightness and a controllable amount of group IV color centers are eventually obtained. Their optical properties at low temperature indicate that this approach can usefully produce dispersed NDs that can deliver suitable optical performance for quantum technologies.

中文翻译：

SiV和GeV中心控制掺杂的化学气相沉积法从固体源大规模制备高发射纳米金刚石

提出了一种新的策略来生产松散的化学气相沉积纳米金刚石（ND），而无需种子衬底，并且有意通过固体来源的硅空位和GeV中心对其进行掺杂。在生长过程中添加少量的气体（例如N ₂或O ₂）用作控制旋钮，以微调嵌入式色心的发射强度。最终获得具有高亮度和可控数量的IV组色心的ND。它们在低温下的光学特性表明，该方法可以有效地产生分散的ND，这些ND可以为量子技术提供合适的光学性能。

更新日期：2019-12-12

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