Tandem dye‐sensitized solar cell devices (t‐DSSCs) are a potential alternative to Si‐based solar cells as autonomous power sources. Nevertheless, their further development suffers from the poor quality of the p‐type material, that is, NiO. In this study, N‐doped TiO₂ thin films exhibiting a p‐type conductivity (p‐TiO₂:N) are successfully grown by co‐reactive magnetron sputtering. Its p‐type conductivity is correlated to the incorporation of N atoms in substitutional positions which is controllable by carefully tuning the ratio between O₂ and N₂ reactive gases during the growth of the material. Furthermore, it reveals a three to six times higher mobility of the carriers (1.5–3.1 cm²·V^−1·s⁻¹) than sputtered NiO. These results are in particular interest for the development of new TiO₂‐based t‐DSSCs.

中文翻译：

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共反应磁控溅射合成p型N掺杂TiO2薄膜

串联染料敏化太阳能电池设备（t-DSSC）是作为自主电源的基于Si的太阳能电池的潜在替代品。然而，它们的进一步发展受到p型材料（即NiO）质量差的困扰。在这项研究中，通过共反应磁控溅射成功地生长了具有ap型电导率（p-TiO ₂：N）的N掺杂TiO ₂薄膜。其p型电导率与N原子在取代位置的掺入有关，这可以通过在材料生长过程中仔细调节O ₂和N ₂反应性气体之间的比例来控制。此外，它显示出载流子的迁移率是三到六倍（1.5–3.1 cm ² ·V ^-1·s ^-1）比溅射的NiO大。这些结果对于开发新的基于TiO ₂的t-DSSCs特别感兴趣。