Pore sealing mechanism in OSG low‐k films under ion bombardment,Plasma Processes and Polymers

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Pore sealing mechanism in OSG low‐k films under ion bombardment
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2019-12-04 , DOI: 10.1002/ppap.201900165
Ekaterina N. Voronina _{1,

2} , Anastasia A. Sycheva ₁ , Dmitry V. Lopaev ₁ , Tatyana V. Rakhimova ₁ , Alexander T. Rakhimov _{1,

2} , Olga V. Proshina ₁ , Dmitry G. Voloshin ₁ , Sergey M. Zyryanov _{1,

2} , Alexey I. Zotovich ₁ , Yuri A. Mankelevich ₁

Affiliation

Organosilicate glass (OSG) nanoporous films with a low dielectric constant (low‐k) are used as interlayer‐dielectric insulators for advanced interconnects of ultra‐large‐scale integration devices. Plasma treatment of these materials can lead to their degradation resulting in increasing k‐value and reducing lifetime and reliability. However, for some OSG films, the densification of the uppermost surface layer and pore sealing was observed under ion irradiation. This paper presents the results of a combined experimental and modeling study of mechanisms of low‐k film densification by ion bombardment depending on the film‐pore size, ion type, and energy. The obtained results reveal that experimentally observed densification and pore sealing of uppermost layers of OSG films occur via collapse of near‐surface pores under the impact of energetic ions.

中文翻译：

离子轰击下OSG低k膜的孔密封机理

具有低介电常数（low - k）的有机硅玻璃（OSG）纳米多孔膜用作超大规模集成设备的高级互连的层间介电绝缘体。这些材料的等离子体处理可能导致其降解，从而导致k值增加，并降低使用寿命和可靠性。但是，对于某些OSG膜，在离子照射下观察到最表面层的致密化和气孔密封。本文介绍了低k机理的组合实验和建模研究的结果通过离子轰击进行的膜致密化取决于膜孔的大小，离子类型和能量。获得的结果表明，实验观察到的OSG膜最上层的致密化和孔密封是通过在高能离子的作用下近表面孔的塌陷而发生的。

更新日期：2019-12-04

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