Radial distribution of C4H8–H2–TMS plasma during plasma‐enhanced chemical vapor deposition of Si‐doped glow discharge polymers,Plasma Processes and Polymers

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Radial distribution of C4H8–H2–TMS plasma during plasma‐enhanced chemical vapor deposition of Si‐doped glow discharge polymers
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2019-11-06 , DOI: 10.1002/ppap.201900075
Xing Ai ₁ , Xiao‐Shan He ₁ , Guo Chen ₁ , Ling Zhang ₂ , Jing‐Lin Huang ₁ , Kai Du ₁ , Zhi‐Bing He ₁

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A silicon‐doped glow discharge polymer (Si‐GDP) was prepared by plasma‐enhanced chemical vapor deposition technique of mixtures of trans‐2‐butene (C₄H₈), hydrogen (H₂), and tetramethylsilane (TMS). The plasma parameters were characterized by mass spectrometry. The film properties of Si‐GDP were investigated by Fourier transform infrared spectroscopy and X‐ray photoelectron spectroscopy. At a TMS flow of 0.15 cm³/min, the radial distribution of the relative intensities of CH fragment ions was uniform, which indicates balanced dissociation and polymerization. As the radial distance increases, the ion energy decreases, and the ratio of sp³/sp² carbon and the atomic ratio of Si increases. The purpose of this work was to explore correlations between C₄H₈/H₂/TMS plasma parameters and Si‐GDP film properties.

中文翻译：

掺Si辉光放电聚合物的等离子增强化学气相沉积过程中C4H8–H2–TMS等离子体的径向分布

通过等离子体增强化学气相沉积技术，将反式-2-丁烯（C ₄ H ₈），氢（H ₂）和四甲基硅烷（TMS）的混合物制备为掺硅辉光放电聚合物（Si-GDP ）。通过质谱表征血浆参数。通过傅立叶变换红外光谱和X射线光电子能谱研究了Si-GDP的薄膜特性。在0.15 cm ³ / min的TMS流量下，CH碎片离子相对强度的径向分布是均匀的，这表明平衡的解离和聚合反应。随着径向距离的增加，离子能量减小，并且sp ³ / sp ²的比率碳和Si的原子比增加。这项工作的目的是探索C ₄ H ₈ / H ₂ / TMS等离子体参数与Si-GDP膜性能之间的相关性。

更新日期：2019-11-06

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