In this work, high‐crystalline Ga₂O₃ nanorods with improved photoelectrochemical properties were fabricated on Ti substrates by a facile electrodeposition. The photocurrent density of oval‐like Ga₂O₃ nanorods is 122.4 uA cm⁻² at 0.6 V vs. Ag/AgCl, which is much higher than that of rectangular Ga₂O₃ nanorods (69 uA cm⁻²). This enhancement in performance might be ascribed to the decreased bandgap energy, which greatly promotes its oxidation ability of photogenerated hole.

中文翻译：

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用于光电化学水分解的Ga2O3纳米棒的简便制备

在这项工作中，通过简便的电沉积在Ti基片上制备了具有改善的光电化学性质的高结晶Ga ₂ O ₃纳米棒。椭圆形的Ga ₂ O ₃纳米棒在0.6 V时的光电流密度为122.4 uA cm ^-2对Ag / AgCl，远高于矩形的Ga ₂ O ₃纳米棒（69 uA cm ^-2）。性能的提高可能归因于带隙能量的降低，这极大地促进了其光生空穴的氧化能力。