Abstract By means of chemical bath deposition of selenourea in the presence of ammonium iodide and antioxidants (C6H8O6, Na2SO3, Na2SO3 + C6H8O6, SnCl2) high adhesion nanostructured films of PbSe with a thickness of 300–690 nm were obtained. Depending on the type of antioxidant introduced into the reaction mixture, the dimensions of the crystallites forming the PbSe film in the series listed decrease from 60 ± 10 to 8 ± 2 nm with simultaneous growth from 0.21 ± 0.01 to 1.25 ± 0.15% of microstresses. An increase in the lattice constant of as-deposited lead selenide from 0.6129(8) to 0.6265(9) nm correlates with an increase in the content of iodine in the PbSe film. Using X-ray diffraction, scanning electron microscopy with EDX-analysis and X-ray photoelectron spectroscopy, we investigated the effect of annealing PbSe films on their elemental, phase composition, lattice parameters and surface morphology. It is established that the annealed PbSe films are multiphase and contain PbSeO3, PbSeO4, PbI2. Low-temperature studies in the range of 213–333 K allowed us to determine the PbSe band gap, ranged from 0.265 to 0.349 eV, which depends strongly on a type of antioxidant. PbSe films synthesized using ascorbic acid and tin (II) chloride have anomalously high responsibility at relatively low temperatures, which makes it possible to manufacture highly sensitive IR detectors on their basis.

中文翻译：

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使用不同抗氧化剂沉积的纳米结构 PbSe 薄膜的组成、结构和功能特性

摘要 通过在碘化铵和抗氧化剂（C6H8O6、Na2SO3、Na2SO3 + C6H8O6、SnCl2）存在下化学浴沉积硒脲，获得了厚度为 300-690 nm 的 PbSe 高粘附纳米结构薄膜。根据引入反应混合物的抗氧化剂类型，在所列系列中形成 PbSe 膜的微晶尺寸从 60 ± 10 nm 减小到 8 ± 2 nm，同时生长从 0.21 ± 0.01 到 1.25 ± 0.15% 的微应力。沉积态硒化铅的晶格常数从 0.6129(8) 增加到 0.6265(9) nm 与 PbSe 膜中碘含量的增加相关。我们使用 X 射线衍射、带有 EDX 分析的扫描电子显微镜和 X 射线光电子能谱，研究了退火 PbSe 薄膜对其元素、相组成、晶格参数和表面形貌。已确定退火的 PbSe 薄膜是多相的，含有 PbSeO3、PbSeO4、PbI2。213–333 K 范围内的低温研究使我们能够确定 PbSe 带隙，范围从 0.265 到 0.349 eV，这在很大程度上取决于抗氧化剂的类型。使用抗坏血酸和氯化锡 (II) 合成的 PbSe 薄膜在相对较低的温度下具有异常高的责任感，这使得在它们的基础上制造高灵敏度的红外探测器成为可能。这在很大程度上取决于一种抗氧化剂。使用抗坏血酸和氯化锡 (II) 合成的 PbSe 薄膜在相对较低的温度下具有异常高的责任感，这使得在它们的基础上制造高灵敏度的红外探测器成为可能。这在很大程度上取决于一种抗氧化剂。使用抗坏血酸和氯化锡 (II) 合成的 PbSe 薄膜在相对较低的温度下具有异常高的责任感，这使得在它们的基础上制造高灵敏度的红外探测器成为可能。