In this study, heterojunction photoelectric devices based ZnO nanowires were fabricated on p-Si substrate with and without single-layer graphene as insert layer. ZnO nanowires and graphene were prepared by hydrothermal method and chemical vapor deposition respectively. The effect of insert layer on the morphology of ZnO nanowires was very weak as can be seen from scanning electron microscope and X-ray diffraction. Raman scattering showed that the graphene prepared was a single-layer structure. The ultraviolet detection performance of photodetectors with single graphene insert layer was much better than that of photodetectors without single graphene insert layer. The ultraviolet irradiation sensitivity of photodetectors with single graphene insert layer was up to 1071 which was improved 7 times than that of photodetectors without single graphene insert layer. Moreover, photodetectors with single graphene insert layer had faster response time (1.02 s) and recovery time (0.34 s).

中文翻译：

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基于硅衬底上由ZnO纳米线和单层石墨烯组成的异质结的增强型紫外光电检测

在这项研究中，在具有和不具有单层石墨烯作为插入层的p-Si衬底上制造了基于异质结光电器件的ZnO纳米线。分别采用水热法和化学气相沉积法制备了ZnO纳米线和石墨烯。从扫描电子显微镜和X射线衍射可以看出，插入层对ZnO纳米线形态的影响非常弱。拉曼散射表明，所制备的石墨烯为单层结构。具有单层石墨烯插入层的光电探测器的紫外线检测性能比没有单层石墨烯插入层的光电探测器的紫外检测性能好得多。具有单石墨烯插入层的光电探测器的紫外线照射灵敏度高达1071，比不具有单石墨烯插入层的光电探测器的紫外线辐射灵敏度提高了7倍。此外，具有单个石墨烯插入层的光电探测器具有更快的响应时间（1.02 s）和恢复时间（0.34 s）。