Abstract

The possibility of preparing highly (002) oriented Ti films on the Si (100) substrate was studied using RF sputtering. The deposition behavior was compared between floating and grounded substrates at room temperature. Highly (002) oriented Ti films could be successfully prepared on the floating Si (100) substrate, which was revealed by X-ray diffraction and high resolution transmission electron microscope. To understand the different deposition behavior between floating and grounded substrates, the incident energy of ions during RF sputtering was estimated from the substrate temperature measured by the K-type thermocouple. The incident energy on the floating substrate was lower by 20% than that on the grounded substrate. It was suggested that the lower incident energy on the floating substrate would be responsible for the deposition of highly (002) oriented Ti films at room temperature.

Graphic Abstract

抽象的

使用RF溅射研究了在Si（100）衬底上制备高度（002）取向的Ti膜的可能性。比较了室温下浮置基板和接地基板之间的沉积行为。X射线衍射和高分辨透射电镜可以揭示在浮动Si（100）衬底上成功制备高（002）取向的Ti膜。为了了解浮动基板和接地基板之间的不同沉积行为，根据K型热电偶测量的基板温度估算了RF溅射过程中离子的入射能量。浮动基板上的入射能量比接地基板上的入射能量低20％。

图形摘要