Abstract

Solution processing of metal oxide-based semiconductors is an attractive route for low-cost fabrication of thin films devices. ZnO thin films were synthesized from one-step spin coating-pyrolysis technique using zinc neodecanoate precursor. X-ray diffraction (XRD), UV–visible optical transmission spectrometry and photoluminescence spectroscopy suggested conversion to polycrystalline ZnO phase for decomposition temperatures higher than 400 °C. A 15 % precursor concentration was found to produce optimal TFT performance on annealing at 500 °C, due to generation of sufficient charge percolation pathways. The device performance was found to improve upon increasing the annealing temperature and the optimal saturation mobility of 0.1 cm² V⁻¹ s⁻¹ with I_ON/I_OFF ratio ~ 10⁷ was achieved at 700 °C annealing temperature. The analysis of experimental results based on theoretical models to understand charge transport envisaged that the grain boundary depletion region is major source of deep level traps and their effective removal at increased annealing temperature leads to evolution of transistor performance.

Graphic Abstract

Single-step spin coating-pyrolysis synthesis of ZnO thin films from non-aqueous precursor zinc neodecanoate has been investigated for transistor applications.

Open image in new window

抽象的

基于金属氧化物的半导体的固溶处理是低成本制造薄膜器件的诱人途径。使用新癸酸锌前驱体通过一步旋涂热解技术合成了ZnO薄膜。X射线衍射（XRD），紫外可见光透射光谱法和光致发光光谱法表明，分解温度高于400°C时，可转变为多晶ZnO相。发现15％的前体浓度可在500°C的退火条件下产生最佳的TFT性能，这是由于产生了足够的电荷渗流途径所致。器件的性能，发现在增加退火温度和0.1cm的最佳饱和迁移率，提高²  V ^-1 小号^-1与我在700°C的退火温度下，_ON / I _OFF比率约为10 ⁷。根据理论模型对实验结果进行分析，以了解电荷迁移，可以预见晶界耗尽区是深能级陷阱的主要来源，在升高的退火温度下有效去除势垒会导致晶体管性能的发展。

图形摘要

已经研究了由非水前体新癸酸锌单步旋涂-热解合成ZnO薄膜的晶体管应用。

在新窗口中打开图像