For many applications of polycarbonate (PC) from packaging to micro-electronics improved barrier properties are necessary. In this contribution, silica thin films were deposited from hexamethyldisiloxane/oxygen (HMDSO/O 2 ) on polycarbonate substrate in three step plasma processes by combining a microwave (MW) surface wave discharge of 2.45 GHz with an optional radio-frequency (RF) bias of 13.56 MHz. The influence of interlayer thickness, HMDSO flow and oxygen to HMDSO ratio on barrier performance for three step-coating processes was investigated. The morphology and surface properties of the coated surface of PC were studied by atomic force microscopy (AFM). The surface topography showed a silica particles distribution on the PC substrate with relatively smooth surface roughness. AFM-QNM provides more insight into the surface morphology and stiffness. The results identify the coating structure for PC film coated with and without bias. High barrier improvement of the deposited films on PC substrates was obtained after plasma silicon coating process with a barrier improvement factor up to 337. It was found that the deposition process is optimal for food packaging applications by using combined MW-RF PECVD technology.

中文翻译：

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在脉冲等离子体中沉积在聚碳酸酯基板上的氧化硅阻挡膜

对于聚碳酸酯 (PC) 从包装到微电子的许多应用，改进阻隔性能是必要的。在这项贡献中，通过将 2.45 GHz 的微波 (MW) 表面波放电与可选的射频 (RF) 偏置相结合，在三步等离子体工艺中，由六甲基二硅氧烷/氧气 (HMDSO/O 2 ) 在聚碳酸酯基板上沉积二氧化硅薄膜13.56 兆赫。研究了中间层厚度、HMDSO 流量和氧与 HMDSO 比对三个步骤涂层工艺的阻隔性能的影响。通过原子力显微镜（AFM）研究了PC涂层表面的形貌和表面性质。表面形貌显示出二氧化硅颗粒分布在 PC 基板上，具有相对光滑的表面粗糙度。AFM-QNM 提供了对表面形态和刚度的更多了解。结果确定了有偏压和无偏压涂覆的 PC 薄膜的涂层结构。在等离子硅涂层工艺后，PC 基板上的沉积薄膜获得了高阻隔改进，阻隔改进系数高达 337。发现通过使用组合 MW-RF PECVD 技术，沉积工艺最适合食品包装应用。