Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have drawn intensive attention due to their ultrathin feature with excellent electrostatic gating capability, and unique thickness-dependent electronic and optical properties. Controlling the thickness and doping of 2D TMDCs are crucial toward their future applications. Here, we report an effective HAuCl₄ treatment method and achieve simultaneous thinning and doping of various TMDCs in one step. We find that the HAuCl₄ treatment not only thins thick MoS₂ flakes into few layers or even monolayers, but also simultaneously tunes MoS₂ into p-type. The effects of various parameters in the process have been studied systematically, and an Au intercalation assisted thinning and doping mechanism is proposed. Importantly, this method also works for other typical TMDCs, including WS₂, MoSe₂ and WSe₂, showing good universality. Electrical transport measurements of field-effect transistors (FETs) based on MoS₂ flakes show a big increase of On/Off current ratios (from 10² to 10⁷) after the HAuCl₄ treatment. Meanwhile, the subthreshold voltages of the MoS₂ FETs shift from −60 to +27 V after the HAuCl₄ treatment, with a p-type doping behavior. This study provides an effective and simple method to control the thickness and doping properties of 2D TMDCs, paving a way for their applications in high performance electronics and optoelectronics.

二维（2D）过渡金属二硫化碳（TMDC）由于其超薄特性，出色的静电门控功能以及独特的厚度依赖性电子和光学特性而备受关注。控制二维TMDC的厚度和掺杂对它们的未来应用至关重要。在这里，我们报告了一种有效的HAuCl ₄处理方法，并在一个步骤中同时实现了各种TMDC的稀化和掺杂。我们发现，HAuCl ₄处理不仅可以将厚厚的MoS ₂薄片减薄为几层甚至单层，还可以同时调整MoS ₂变成p型。系统地研究了工艺中各种参数的影响，提出了金插层辅助的稀化和掺杂机理。重要的是，此方法还适用于其他典型的TMDC，包括具有良好通用性的WS ₂，MoSe ₂和WSe ₂。基于MoS ₂薄片的场效应晶体管（FET）的电传输测量结果显示，经过HAuCl ₄处理后，开/关电流比（从10 ²到10 ⁷）大大增加。同时，在HAuCl ₄之后，MoS ₂ FET的亚阈值电压从-60变为+27 V处理，具有p型掺杂行为。这项研究提供了一种有效而简单的方法来控制2D TMDC的厚度和掺杂特性，为它们在高性能电子学和光电子学中的应用铺平了道路。