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A flashback for resistive memory
Nature Electronics ( IF 33.7 ) Pub Date : 2019-12-09 , DOI: 10.1038/s41928-019-0332-0
Martin Ziegler

Purely electronic memristive devices based on CMOS flash memory technology could lead to large-scale neuromorphic systems.

中文翻译:

电阻存储器的闪回

基于CMOS闪存技术的纯电子忆阻器件可能导致大规模的神经形态系统。
更新日期:2019-12-11
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