The main bottleneck causing lags in the application of transition metal oxides as substitutes for poly (3,4-ethylenedioxythiophene):poly (styrene-sulfonate) (PEDOT:PSS) are the relatively low level efficiencies of quantum dot light-emitting diodes (QLEDs), even though they can improve a device's stability. High-performance QLEDs are fabricated with long lifetimes using low-cost, reliable and all-solution-processed hole injection materials with a double hole injection layer (HIL) structure. Vanadium oxide (V₂O₅)/PEDOT:PSS double HILs offer a small staircase interface barrier, which enhance the hole injection and achieve a better charge balance. By using this double HIL regular planar architecture device, the maximum external quantum efficiency (η_EQE) reaches 18.09% and over 13355 h of lifetime. The related control PEDOT:PSS-based and V₂O₅-based QLEDs have maximum η_EQE of 13.79% and 9.13% with 6117 and 30881 h of lifetime, respectively. Due to the enhanced hole injection with the staircase interface barrier, the double HIL architecture QLEDs also have a high η_EQE above 15.00% over a wide range of 900–26000 cd m⁻² with a low efficiency roll-off. These discoveries support the use of inorganic transition metal oxides as HILs for QLEDs with high efficiency and brightness for long operational lifetimes.

过渡金属氧化物替代聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）的应用中导致滞后的主要瓶颈是量子点发光二极管（QLED）的相对较低水平的效率），即使它们可以提高设备的稳定性。高性能QLED使用具有双空穴注入层（HIL）结构的低成本，可靠且经过全溶液处理的空穴注入材料制造而成，使用寿命长。氧化钒（V ₂ O ₅）/ PEDOT：PSS双HIL提供较小的阶梯界面势垒，可增强空穴注入并实现更好的电荷平衡。通过使用这种双HIL常规平面架构设备，最大外量子效率（η _EQE）达到18.09％，并且使用寿命超过13355小时。相关的控制PEDOT：基于PSS和V ₂ ö _5个系QLEDs具有最大η _EQE的13.79％和9.13％分别寿命的6117和30881小时，。由于与楼梯界面屏障增强的空穴注入，双HIL架构QLEDs也具有高的η _EQE 15.00％以上在宽范围的900-26000 CD米^-2具有低效率的滚降。这些发现支持使用无机过渡金属氧化物作为高效率和高亮度的QLED的HIL，以延长使用寿命。