Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Low‐Temperature Oxidation‐Processed Titanium Oxides as Dual‐Functional Electron‐Selective Passivation Contacts
Solar RRL ( IF 6.0 ) Pub Date : 2019-12-10 , DOI: 10.1002/solr.201900490 Wei Wang 1, 2 , Zhenhai Yang 1, 3 , Zhixue Wang 1 , Hao Lin 1 , Jiajia Wang 1, 2 , Mingdun Liao 1 , Yuheng Zeng 1 , Baojie Yan 1 , Jichun Ye 1
Solar RRL ( IF 6.0 ) Pub Date : 2019-12-10 , DOI: 10.1002/solr.201900490 Wei Wang 1, 2 , Zhenhai Yang 1, 3 , Zhixue Wang 1 , Hao Lin 1 , Jiajia Wang 1, 2 , Mingdun Liao 1 , Yuheng Zeng 1 , Baojie Yan 1 , Jichun Ye 1
Affiliation
|
Passivation contact (PSC), which simultaneously achieves high passivation quality and low contact resistivity, has been proven to be a delicate design to fabricate high‐efficiency solar cells (SCs). However, traditional PSC materials, that is, intrinsic a‐Si:H/doped a‐Si:H or tunnel SiO2/doped poly‐Si, overly rely on the complex procedures and have inevitable optical or Auger recombination losses. Herein, a novel low‐temperature oxidation (LTO) process is developed and an electron‐selective TiOx film (LTO‐TiOx) is fabricated, reaching a low‐effective surface recombination velocity of 13.7 cm s−1. The high‐quality passivation performance is mainly attributed to the chemical passivation of Ti–O–Si bonds and the surface carrier manipulation ability of the LTO‐TiOx film. Next, by adding a low work function (WF) layer of LiFx film, the surface band bending effect is formed and the contact resistivity of TiOx‐based PSC is also optimized. Furthermore, the dual‐functional LTO‐TiOx/LiFx electron‐selective PSC is integrated in Si SCs and a champion efficiency is achieved near 19% with an open‐circuit voltage near 640 mV. Finally, a comprehensive simulation analysis indicates a high efficiency of more than 22% based on LTO‐TiOx PSC, followed by a detailed roadmap of efficiency improvements, demonstrating its huge application potential in SCs.
中文翻译：
低温氧化处理钛氧化物作为双功能电子选择性钝化触点
钝化接触（PSC）同时实现了高钝化质量和低接触电阻率，已被证明是制造高效率太阳能电池（SC）的精巧设计。但是，传统的PSC材料，即固有的a-Si：H /掺杂的a-Si：H或隧道SiO 2 /掺杂的多晶硅，过分依赖复杂的过程，并且不可避免地发生光学或俄歇复合损失。在此，开发了一种新颖的低温氧化（LTO）工艺，并制备了电子选择性TiO x膜（LTO-TiO x），达到了13.7 cm s -1的低表面重组效率。。高质量的钝化性能主要归因于Ti-O-Si键的化学钝化以及LTO-TiO x膜的表面载流子操纵能力。接下来，通过添加LiF x膜的低功函数（WF）层，形成表面带弯曲效应，并且还优化了基于TiO x的PSC的接触电阻率。此外，双功能LTO-TiO x / LiF x电子选择性PSC集成在Si SC中，开路电压接近640 mV时，实现了近19％的最佳效率。最后，全面的模拟分析表明，基于LTO-TiO x的效率高达22％以上 PSC，然后是详细的效率改进路线图，展示了其在SC中的巨大应用潜力。
更新日期：2019-12-10
中文翻译：
低温氧化处理钛氧化物作为双功能电子选择性钝化触点
钝化接触（PSC）同时实现了高钝化质量和低接触电阻率，已被证明是制造高效率太阳能电池（SC）的精巧设计。但是，传统的PSC材料，即固有的a-Si：H /掺杂的a-Si：H或隧道SiO 2 /掺杂的多晶硅，过分依赖复杂的过程，并且不可避免地发生光学或俄歇复合损失。在此，开发了一种新颖的低温氧化（LTO）工艺，并制备了电子选择性TiO x膜（LTO-TiO x），达到了13.7 cm s -1的低表面重组效率。。高质量的钝化性能主要归因于Ti-O-Si键的化学钝化以及LTO-TiO x膜的表面载流子操纵能力。接下来，通过添加LiF x膜的低功函数（WF）层，形成表面带弯曲效应，并且还优化了基于TiO x的PSC的接触电阻率。此外，双功能LTO-TiO x / LiF x电子选择性PSC集成在Si SC中，开路电压接近640 mV时，实现了近19％的最佳效率。最后，全面的模拟分析表明，基于LTO-TiO x的效率高达22％以上 PSC，然后是详细的效率改进路线图，展示了其在SC中的巨大应用潜力。
京公网安备 11010802027423号