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Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms.
Nanoscale Research Letters ( IF 5.5 ) Pub Date : 2019-12-09 , DOI: 10.1186/s11671-019-3179-4
Hang Yang 1 , Wei Chen 2 , Xiaoming Zheng 1 , Dongsheng Yang 2 , Yuze Hu 2 , Xiangzhe Zhang 2 , Xin Ye 3 , Yi Zhang 1 , Tian Jiang 2 , Gang Peng 1 , Xueao Zhang 4 , Renyan Zhang 2 , Chuyun Deng 1 , Shiqiao Qin 2
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The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.

中文翻译:

多层Bi2O2Se纳米膜的近红外光电性能。

本文系统地研究了多层Bi2O2Se纳米薄膜的近红外(NIR)光电性能。多层Bi2O2Se纳米膜对NIR表现出敏感的光响应,包括高光响应度(〜101 A / W),快速响应时间(〜30 ms),高外部量子效率(〜20,300%)和高检测率( 1.9×1010琼斯)。这些结果表明,基于多层Bi2O2Se纳米膜的器件在超快,高灵敏度NIR光电器件的未来应用中可能具有巨大的潜力。
更新日期:2019-12-09
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