The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.

中文翻译：

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多层Bi2O2Se纳米膜的近红外光电性能。

本文系统地研究了多层Bi2O2Se纳米薄膜的近红外（NIR）光电性能。多层Bi2O2Se纳米膜对NIR表现出敏感的光响应，包括高光响应度（〜101 A / W），快速响应时间（〜30 ms），高外部量子效率（〜20,300％）和高检测率（ 1.9×1010琼斯）。这些结果表明，基于多层Bi2O2Se纳米膜的器件在超快，高灵敏度NIR光电器件的未来应用中可能具有巨大的潜力。