Defect engineering of p-type silicon heterojunction solar cells fabricated using commercial-grade low-lifetime silicon wafers,Progress in Photovoltaics

当前位置： X-MOL 学术 › Prog. Photovoltaics › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Defect engineering of p-type silicon heterojunction solar cells fabricated using commercial-grade low-lifetime silicon wafers
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2019-12-09 , DOI: 10.1002/pip.3230
Daniel Chen ₁ , Moonyong Kim ₁ , Jianwei Shi ₂ , Bruno Vicari Stefani ₁ , Zhengshan (Jason) Yu ₂ , Shaoyang Liu ₁ , Roland Einhaus ₃ , Stuart Wenham ₁ , Zachary Holman ₂ , Brett Hallam ₁

Affiliation

In this work, we integrate defect engineering methods of gettering and hydrogenation into silicon heterojunction solar cells fabricated using low-lifetime commercial-grade p-type Czochralski-grown monocrystalline and high-performance multicrystalline wafers. We independently assess the impact of gettering on the removal of bulk impurities such as iron as well as the impact of hydrogenation on the passivation of grain boundaries and B-O defects. Furthermore, we report for the first time the susceptibility of heterojunction devices to light- and elevated temperature–induced degradation and investigate the onset of such degradation during device fabrication. Lastly, we demonstrate solar cells with independently verified 1-sun open-circuit voltages of 707 and 702 mV on monocrystalline and multicrystalline silicon wafers, respectively, with a starting bulk minority-carrier lifetime below 40 microseconds. These remarkably high open-circuit voltages reveal the potential of inexpensive low-lifetime p-type silicon wafers for making devices with efficiencies without needing to shift towards n-type substrates.

中文翻译：

使用商业级低寿命硅片制造的 p 型硅异质结太阳能电池的缺陷工程

在这项工作中，我们将吸气和氢化的缺陷工程方法集成到使用低寿命商业级 p 型直拉生长单晶和高性能多晶晶片制造的硅异质结太阳能电池中。我们独立评估了吸气对去除大量杂质（如铁）的影响以及氢化对晶界钝化和 BO 缺陷的影响。此外，我们首次报告了异质结器件对光和高温诱导的退化的敏感性，并研究了器件制造过程中这种退化的开始。最后，我们在单晶和多晶硅片上分别展示了具有独立验证的 1-sun 开路电压 707 和 702 mV 的太阳能电池，具有低于 40 微秒的起始体少数载流子寿命。这些非常高的开路电压揭示了廉价的低寿命 p 型硅晶片在制造具有效率的器件方面的潜力，而无需转向 n 型衬底。

更新日期：2019-12-09

点击分享查看原文

点击收藏

公开下载

阅读更多本刊最新论文本刊介绍/投稿指南11