Significant enhancement of light-induced transverse thermoelectric (LITT) effect in tilted BiCuSeO film has been achieved via introduction of an ultra-thin layer of gold nanoparticles (AuNPs) with the thickness of a few nanometers. In both cases of pulsed and continuous light irradiation, about two times increment in the LITT voltage sensitivity is observed for the BiCuSeO film coated with 4-nm-thick AuNPs layer. This can be ascribed to the increased photo-thermal conversion efficiency in the LITT effect owing to the efficient usage of the incident light of AuNPs layer. Thicker AuNPs layer will suppress the voltage sensitivity increment due to the electrical connectivity effect. This work provides an effective strategy for optimizing the performance of thermal-type optical detectors based on the LITT effect.

中文翻译：

---

通过超薄AuNPs层在倾斜的BiCuSeO薄膜中增强的光诱导横向热电效应。

通过引入厚度为几纳米的超薄金纳米颗粒（AuNPs）层，已实现了倾斜BiCuSeO薄膜中光致横向热电（LITT）效应的显着增强。在脉冲和连续光照射的两种情况下，对于涂有4 nm厚AuNPs层的BiCuSeO膜，观察到的LITT电压灵敏度大约增加了两倍。这归因于由于有效利用了AuNPs层的入射光，LITT效应中光热转换效率的提高。由于电连接效应，较厚的AuNPs层将抑制电压灵敏度的增加。这项工作为基于LITT效应优化热型光学探测器性能提供了有效的策略。