Monolayer MoS2 has shown excellent photoresponse properties, but its promising applications in high-sensitivity photodetection suffer from the atomic-thickness-limited adsorption and band gap-limited spectral selectivity. Here we have carried out investigations on MoS2 monolayer-based photodetectors with and without decoration of ZnO quantum dots (ZnO-QDs) for comparison. Compared with monolayer MoS2 photodetectors, the monolayer ZnO-QDs/MoS2 hybrid device exhibits faster response speed (1.5 s and 1.1 s, respectively), extended broadband photoresponse range (deep UV-visible), and enhanced photoresponse in visible spectrum, such as higher responsivity over 0.084 A/W and larger detectivity of 1.05 × 1011 Jones, which results from considerable injection of carries from ZnO-QDs to MoS2 due to the formation of I-type heterostructure existing in the contact interface of them.

中文翻译：

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基于ZnO-QDs /单层MoS2的I型异质结构的紫外可见光探测器。

单层MoS2已显示出优异的光响应特性，但其在高灵敏度光检测中的有希望的应用受到原子厚度限制的吸附和带隙限制的光谱选择性的困扰。在这里，我们对具有和不具有ZnO量子点（ZnO-QDs）装饰的基于MoS2单层的光电探测器进行了研究，以进行比较。与单层MoS2光电探测器相比，单层ZnO-QDs / MoS2混合器件表现出更快的响应速度（分别为1.5 s和1.1 s），更宽的宽带光响应范围（深紫外可见）和增强的可见光谱光响应，例如更高。响应度超过0.084 A / W，探测灵敏度更高，为1.05×1011 Jones，