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Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching
Advanced Materials Technologies ( IF 6.4 ) Pub Date : 2019-12-03 , DOI: 10.1002/admt.201900607 Alexey Mikhaylov 1 , Alexey Belov 1 , Dmitry Korolev 1 , Ivan Antonov 1 , Valentina Kotomina 1 , Alina Kotina 1 , Evgeny Gryaznov 1 , Alexander Sharapov 1 , Maria Koryazhkina 1 , Ruslan Kryukov 1 , Sergey Zubkov 1 , Artem Sushkov 1 , Dmitry Pavlov 1 , Stanislav Tikhov 1 , Oleg Morozov 1 , David Tetelbaum 1
Advanced Materials Technologies ( IF 6.4 ) Pub Date : 2019-12-03 , DOI: 10.1002/admt.201900607 Alexey Mikhaylov 1 , Alexey Belov 1 , Dmitry Korolev 1 , Ivan Antonov 1 , Valentina Kotomina 1 , Alina Kotina 1 , Evgeny Gryaznov 1 , Alexander Sharapov 1 , Maria Koryazhkina 1 , Ruslan Kryukov 1 , Sergey Zubkov 1 , Artem Sushkov 1 , Dmitry Pavlov 1 , Stanislav Tikhov 1 , Oleg Morozov 1 , David Tetelbaum 1
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Variability of resistive switching is a key problem for application of memristive devices in emerging information‐computing systems. Achieving a stable switching between the nonlinear resistive states is an important task on the way to implementation of large memristive cross‐bar arrays and solving the related sneak‐path‐current problem. A promising approach is the fabrication of memristive structures with appropriate interfaces by combining the materials of electrodes with certain oxygen affinity and different dielectric layers. In the present work, such approach allows the demonstration of stabilized resistive switching in a multilayer device structure based on ZrO2(Y) and Ta2O5 films. It is established for the large‐area devices that the switching is stabilized after several hundreds of cycles. A possible scenario of the stabilization is proposed taking into account experimental data on the presence of grain boundaries in ZrO2(Y) as the preferred sites for nucleation of filaments, self‐organization of Ta nanocrystals as the electric field concentrators in Ta2O5 film, as well as oxygen exchange between oxide layers and interface with bottom TiN electrode. The robust resistive switching between nonlinear states is implemented in microscale cross‐point devices without numerous cycling before stabilization promising for the fabrication of programmable memristive weights in passively integrated cross‐bar arrays.
中文翻译：
具有稳定电阻开关的多层金属氧化物忆阻装置
电阻式开关的可变性是忆阻器件在新兴信息计算系统中应用的关键问题。在实现大型忆阻交叉开关阵列和解决相关的潜路径电流问题的过程中，实现非线性电阻状态之间的稳定切换是一项重要任务。一种有前途的方法是通过结合具有一定氧亲和力和不同介电层的电极材料来制造具有适当界面的忆阻结构。在目前的工作中，这种方法可以演示基于ZrO 2（Y）和Ta 2 O 5的多层器件结构中稳定的电阻切换。电影。对于大面积设备，可以确定在数百个周期后切换稳定。考虑到ZrO 2（Y）中存在晶界作为细丝成核的首选位点，Ta纳米晶体的自组织作为Ta 2 O 5中的电场集中剂的实验数据，提出了一种可能的稳定方案。薄膜，以及氧化物层之间的氧气交换以及与底部TiN电极的界面。在微型交叉点设备中实现了非线性状态之间的强大电阻切换，而无需进行多次循环，即可稳定下来，从而有望在无源集成交叉棒阵列中制造可编程忆阻配重。
更新日期：2020-01-13
中文翻译：
具有稳定电阻开关的多层金属氧化物忆阻装置
电阻式开关的可变性是忆阻器件在新兴信息计算系统中应用的关键问题。在实现大型忆阻交叉开关阵列和解决相关的潜路径电流问题的过程中，实现非线性电阻状态之间的稳定切换是一项重要任务。一种有前途的方法是通过结合具有一定氧亲和力和不同介电层的电极材料来制造具有适当界面的忆阻结构。在目前的工作中，这种方法可以演示基于ZrO 2（Y）和Ta 2 O 5的多层器件结构中稳定的电阻切换。电影。对于大面积设备，可以确定在数百个周期后切换稳定。考虑到ZrO 2（Y）中存在晶界作为细丝成核的首选位点，Ta纳米晶体的自组织作为Ta 2 O 5中的电场集中剂的实验数据，提出了一种可能的稳定方案。薄膜，以及氧化物层之间的氧气交换以及与底部TiN电极的界面。在微型交叉点设备中实现了非线性状态之间的强大电阻切换，而无需进行多次循环，即可稳定下来，从而有望在无源集成交叉棒阵列中制造可编程忆阻配重。
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