Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy (\({V}_{{\rm{Si}}}\)) in 4H-SiC is a promising single-photon emitter exhibiting millisecond spin coherence times, but suffers from low photon counts, and only one charge state retains the desired spin and optical properties. Here, we demonstrate that emission from \({V}_{{\rm{Si}}}\) defect ensembles can be enhanced by an order of magnitude via fabrication of Schottky barrier diodes, and sequentially modulated by almost \(50 \%\) via application of external bias. Furthermore, we identify charge state transitions of \({V}_{{\rm{Si}}}\) by correlating optical and electrical measurements, and realize selective population of the bright state. Finally, we reveal a pronounced Stark shift of 55 GHz for the V1′ emission line state of \({V}_{{\rm{Si}}}\) at larger electric fields, providing a means to modify the single-photon emission. The approach presented herein paves the way towards obtaining complete control of, and drastically enhanced emission from, \({V}_{{\rm{Si}}}\) defect ensembles in 4H-SiC highly suitable for quantum applications.

可靠的单光子发射对于实现有效的自旋光子纠缠和可扩展的量子信息系统至关重要。4H-SiC中的硅空位（\（{V} _ {{rm {Si}}} \\））是一种很有前途的单光子发射极，具有毫秒自旋相干时间，但光子数量低且只有一个电荷态保持所需的自旋和光学性质。在这里，我们证明通过制造肖特基势垒二极管，可以从\（{V} _ {{rm {Si}}} \）缺陷集合中发射出一个数量级的信号，并通过几乎\（50 \ ％\）通过施加外部偏置。此外，我们确定\（{V} _ {{\ rm {Si}}} \\）的电荷状态转变通过将光电测量相关联，实现对明亮状态的选择性填充。最后，我们揭示了在较大电场下\（{V} _ {{\ rm {Si}}} \）的V1'发射线状态下55 GHz的明显Stark位移，提供了一种修改单光子的方法排放。本文介绍的方法为完全控制4H-SiC缺陷集合中的（{V} _ {{rm {Si}}} \）缺陷集合提供了完全控制并大大增强了发射的方法。