Chemical Lift-Off Lithography of Metal and Semiconductor Surfaces.,ACS Materials Letters

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Chemical Lift-Off Lithography of Metal and Semiconductor Surfaces.
ACS Materials Letters ( IF 9.6 ) Pub Date : 2019-12-03 , DOI: 10.1021/acsmaterialslett.9b00438
Kevin M Cheung _{1,

2} , Dominik M Stemer _{2,

3} , Chuanzhen Zhao _{1,

2} , Thomas D Young _{1,

2} , Jason N Belling _{1,

2} , Anne M Andrews _{1,

2,

4} , Paul S Weiss _{1,

2,

3,

5}

Affiliation

Chemical lift-off lithography (CLL) is a subtractive soft-lithographic technique that uses polydimethylsiloxane (PDMS) stamps to pattern self-assembled monolayers of functional molecules for applications ranging from biomolecule patterning to transistor fabrication. A hallmark of CLL is preferential cleavage of Au-Au bonds, as opposed to bonds connecting the molecular layer to the substrate, i.e., Au-S bonds. Herein, we show that CLL can be used more broadly as a technique to pattern a variety of substrates composed of coinage metals (Pt, Pd, Ag, Cu), transition and reactive metals (Ni, Ti, Al), and a semiconductor (Ge) using straightforward alkanethiolate self-assembly chemistry. We demonstrate high-fidelity patterning in terms of precise features over large areas on all surfaces investigated. We use patterned monolayers as chemical resists for wet etching to generate metal microstructures. Substrate atoms, along with alkanethiolates, were removed as a result of lift-off, as previously observed for Au. We demonstrate the formation of PDMS-stamp-supported bimetallic monolayers by performing CLL on two different metal surfaces using the same PDMS stamp. By expanding the scope of the surfaces compatible with CLL, we advance and generalize CLL as a method to pattern a wide range of substrates, as well as to produce supported metal monolayers, both with broad applications in surface and materials science.

中文翻译：

金属和半导体表面的化学剥离光刻。

化学剥离光刻 (CLL) 是一种减法软光刻技术，它使用聚二甲基硅氧烷 (PDMS) 印模对功能分子的自组装单层进行图案化，适用于从生物分子图案化到晶体管制造等各种应用。 CLL 的一个特点是 Au-Au 键的优先断裂，而不是连接分子层与基底的键，即 Au-S 键。在此，我们表明 CLL 可以更广泛地用作一种技术，用于对由造币金属（Pt、Pd、Ag、Cu）、过渡金属和活性金属（Ni、Ti、Al）和半导体（ Ge）使用简单的烷硫醇自组装化学。我们在所研究的所有表面上大面积的精确特征方面展示了高保真图案。我们使用图案化单层作为湿法蚀刻的化学抗蚀剂来生成金属微结构。正如之前在金中观察到的那样，由于剥离的结果，底物原子与烷硫醇一起被去除。我们通过使用相同的 PDMS 印模在两个不同的金属表面上执行 CLL 来演示 PDMS 印模支持的双金属单层的形成。通过扩大与 CLL 兼容的表面范围，我们推进并推广了 CLL 作为一种对各种基材进行图案化以及生产支撑金属单层的方法，这两种方法在表面和材料科学中都有广泛的应用。

更新日期：2019-12-07

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