High‐Performance Polycrystalline Silicon Thin‐Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged‐Grain Lines,Advanced Electronic Materials

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High‐Performance Polycrystalline Silicon Thin‐Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged‐Grain Lines
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-12-01 , DOI: 10.1002/aelm.201900961
Meng Zhang ₁ , Haotao Lin ₁ , Sunbin Deng ₂ , Rongsheng Chen ₃ , Guijun Li ₄ , Su‐Ting Han ₁ , Ye Zhou ₅ , Yan Yan ₁ , Wei Zhou ₆ , Man Wong ₂ , Hoi‐Sing Kwok ₂

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By utilizing anisotropic conductivity of bridged‐grain (BG) lines, a polycrystalline silicon (poly‐Si) thin‐film transistor (TFT) without source/drain (S/D) doping is designed, simulated, and fabricated. In the new design, the current is made to flow along the BG lines in the S/D region and flow perpendicularly to the BG lines in the channel. By taking advantage of the anisotropic conductivity of the BG lines, the S/D doping process is eliminated and the fabrication process cost is reduced. Meanwhile, the advantages of adopting BG lines are maintained. The as‐fabricated TFTs without S/D doping exhibit excellent device characteristics, compared with normal TFTs. The reliability of TFTs without S/D doping is also evaluated under hot carrier stress and negative/positive bias stress. Additionally, the proposed new TFT structure allows a wider range of dopant activation conditions.

中文翻译：

利用桥式晶粒线的各向异性电导率而无需源极/漏极掺杂的高性能多晶硅薄膜晶体管

通过利用桥接晶粒（BG）线的各向异性电导率，设计，模拟和制造了无源极/漏极（S / D）掺杂的多晶硅（poly-Si）薄膜晶体管（TFT）。在新设计中，使电流沿S / D区域中的BG线流动，并垂直于通道中的BG线流动。通过利用BG线的各向异性导电性，消除了S / D掺杂工艺，并降低了制造工艺成本。同时，保持了采用BG生产线的优势。与普通TFT相比，没有S / D掺杂的预制TFT表现出优异的器件特性。还可以在热载流子应力和负/正偏应力下评估没有S / D掺杂的TFT的可靠性。此外，

更新日期：2020-02-13

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