Optical quantum information processing will require highly efficient photonic circuits to connect quantum nodes on-chip and across long distances. This entails the efficient integration of optically addressable qubits into photonic circuits, as well as quantum frequency conversion to the telecommunications band. 4H-silicon carbide (4H-SiC) offers unique potential for on-chip quantum photonics, as it hosts a variety of promising colour centres and has a strong second-order optical nonlinearity. Here, we demonstrate within a single, monolithic platform the strong enhancement of emission from a colour centre and efficient optical frequency conversion. We develop a fabrication process for thin films of 4H-SiC, which are compatible with industry-standard, CMOS nanofabrication. This work provides a viable route towards industry-compatible, scalable colour-centre-based quantum technologies, including the monolithic generation and frequency conversion of quantum light on-chip.

光量子信息处理将需要高效的光子电路来连接片上量子距离并跨越长距离的量子节点。这需要将可光学寻址的量子位有效地集成到光子电路中，以及将量子频率转换为电信频段。4H碳化硅（4H-SiC）具有许多有前途的色心并且具有很强的二阶光学非线性，因此为片上量子光子学提供了独特的潜力。在这里，我们展示了在一个单一的整体平台中从色心发出的光的强烈增强和有效的光学频率转换。我们开发了一种与工业标准CMOS纳米制造兼容的4H-SiC薄膜制造工艺。这项工作为实现行业兼容提供了一条可行的途径，