Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3([Formula: see text]01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

中文翻译：

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氮化处理杂化2D-MoS2 /3D-β-Ga2O3异质结的能带对准研究。

基于二维（2D）和常规三维（3D）材料的混合异质结为具有工程特征的纳米电子器件提供了一种有前途的方法。在这项工作中，我们研究了在氮化和不氮化的情况下，由转移的MoS2组成的混合维异质结在β-Ga2O3上的能带对准（[公式：参见文本] 01）。未氮化的2D-MoS2 /3D-β-Ga2O3异质结的导带和价带偏移分别确定为0.43±0.1和2.87±0.1 eV。对于氮化异质结，导带和价带偏移分别推导出为0.68±0.1和2.62±0.1 eV。修改后的能带对准可能是由跨异质结界面的电荷转移形成的偶极子引起的。