Abstract Precise thermal characterization of supported nanowires is crucial for the thermal analysis in their applications. This paper developed a one-dimension dual-wavelength flash Raman (DFR) method to measure the thermal diffusivity and line thermal contact resistance of an individual supported nanowire. In this method, two laser pulses with different wavelengths are used for heating the sample and probing the Raman spectra, respectively. The temperature variation curves can be captured by changing the time delay between the two pulses, and the temporal resolution can reach to 100 ps. The laser absorption coefficient of the nanowire can be eliminated in the determination of thermal properties, which greatly enhance the measurement accuracy. To the consideration of accuracy and easy operation of the measurement, for different situations, the complete model considered the temperature variation of the substrate and the simplified model ignored the substrate temperature rise were both analyzed. This method has been used to measure a silicon nanowire which is supported by a sliver substrate. Experimental results of the supported silicon nanowire show that the thermal diffusivity of silicon nanowire is (7.3 ± 1.4) ×10−5 m2/s, and the line thermal contact resistance between the nanowire and the substrate is (2.6 ± 0.1) m·K/W.

中文翻译：

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用于同时测量单个支撑纳米线的热扩散率和线热接触电阻的双波长闪光拉曼方法

摘要 支撑纳米线的精确热表征对其应用中的热分析至关重要。本文开发了一种一维双波长闪光拉曼 (DFR) 方法来测量单个支撑纳米线的热扩散率和线热接触电阻。在该方法中，两个不同波长的激光脉冲分别用于加热样品和探测拉曼光谱。通过改变两个脉冲之间的时间延迟可以捕获温度变化曲线，时间分辨率可达100 ps。纳米线的激光吸收系数在热特性测定中可以消除，大大提高了测量精度。考虑到测量的准确性和易于操作，针对不同情况，对考虑基板温度变化的完整模型和忽略基板温升的简化模型进行了分析。该方法已用于测量由银衬底支撑的硅纳米线。负载硅纳米线的实验结果表明，硅纳米线的热扩散率为（7.3±1.4）×10−5 m2/s，纳米线与衬底的线接触热阻为（2.6±0.1）m·K /W。