Energetic Disorder and Activation Energy in Efficient Ternary Organic Solar Cells with Nonfullerene Acceptor Eh‐IDTBR as the Third Component,Solar RRL

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Energetic Disorder and Activation Energy in Efficient Ternary Organic Solar Cells with Nonfullerene Acceptor Eh‐IDTBR as the Third Component
Solar RRL ( IF 6.0 ) Pub Date : 2019-11-29 , DOI: 10.1002/solr.201900403
Jie Lv _{1,

2,

3} , Yu Feng ₄ , Jiehao Fu ₁ , Jie Gao ₁ , Ranbir Singh ₅ , Manish Kumar ₆ , Min Kim ₇ , Hua Tang _{1,

2} , Shirong Lu ₁ , Weimin Zhang ₈ , Iain McCulloch _{8,

9} , Jianfeng Li ₃ , Zhipeng Kan ₁

Affiliation

Solution‐processed ternary organic solar cells (OSCs) contain a third component in the active layer in addition to the donor/acceptor materials. Two main avenues are considered to fabricate ternary OSCs: 1) to improve the short‐circuit current density by the selected third component that broadens and/or enhances the absorption of the host films and 2) to increase the fill factor by adding materials with diverse crystallinity to tune the film morphology. However, little work is reported for the improvement of open‐circuit voltage (V_OC), energetic disorder, charge transfer state energy (E_CT), and activation energy in ternary OSCs. Herein, ternary OSCs with active layer composed of PCE10:F8IC:Eh‐IDTBR as the model to examine these parameters in addition to the morphology are used. In the ternary device, the additional Eh‐IDTBR improves the crystallinity of the acceptor phase in the ternary mixture; the V_OC is 58 mV higher than that of the reference caused by the reduced energetic disorder; due to the good miscibility of Eh‐IDTBR with both PCE10 and F8IC, only 50 meV in E_CT is observed; and the zero‐field activation energy is lower than that for the reference. The findings provide an alternative way to understand the complex ternary OSC structural–electrical properties’ correlations.

中文翻译：

以非富勒烯受体Eh-IDTBR为第三成分的高效三元有机太阳能电池的能级紊乱和活化能

固溶处理的三元有机太阳能电池（OSC）除了施主/受主材料外，在活性层中还包含第三种成分。三元OSC的主要考虑途径有两种：1）通过选定的第三种成分来提高短路电流密度，从而扩大和/或增强主体膜的吸收； 2）通过添加多种材料来提高填充系数。结晶度以调节膜的形态。然而，关于开路电压（V _OC），高能紊乱，电荷转移态能量（E _CT）改善的报道很少。），以及三元OSC中的活化能。这里，使用具有由PCE10：F8IC：Eh-IDTBR组成的有源层的三元OSC作为模型来检查这些参数以及形态。在三元装置中，额外的Eh-IDTBR可以提高三元混合物中受体相的结晶度。的V _OC是58毫伏比减少引起的高能病症基准的更高; 由于Eh-IDTBR与PCE10和F8IC的良好混溶性，在E _CT中仅观察到50 meV ；零场激活能量低于参考能量。这些发现为理解复杂的三元OSC结构-电特性之间的相互关系提供了另一种方法。

更新日期：2019-11-29

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