Since the finding of plasmon-induced charge separation (PICS) at the interface between a plasmonic metal nanoparticle and a semiconductor, which has been applied to photovoltaics including photodetectors, photocatalysis including water splitting, sensors and data storage in the visible/near-infrared ranges, injection of hot electrons (energetic electrons) into semiconductors has attracted attention almost exclusively. However, it has recently been found that behaviours of holes are also important. In this review, studies on the hot hole ejection from plasmonic nanoparticles are described comprehensively. Hole ejection from plasmonic nanoparticles on electron transport materials including n-type semiconductors allows oxidation reactions to take place at more positive potentials than those involved in a charge accumulation mechanism. Site-selective oxidation is also one of the characteristics of the hole ejection and is applied to photoinduced nanofabrication beyond the diffraction limit. Hole injection into hole transport materials including p-type semiconductors (HTMs) in solid-state cells, hole ejection through a HTM for stabilization of holes, hole ejection to a HTM for efficient hot electron ejection, voltage up-conversion by the use of hot carriers and electrochemically assisted hole ejection are also described.

中文翻译：

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等离激元空穴喷射与等离激元诱导的电荷分离有关

自从在等离激元金属纳米粒子与半导体之间的界面处发现了等离激元诱导的电荷分离（PICS）以来，该方法已应用于包括光电探测器在内的光伏技术，光催化包括水分解，传感器和可见/近红外范围的数据存储因此，将热电子（高能电子）注入半导体几乎几乎引起了人们的注意。然而，最近发现孔的行为也很重要。在这篇综述中，从等离激元纳米粒子热孔喷射的研究进行了全面的描述。从包括n型半导体在内的电子传输材料上的等离激元纳米粒子进行空穴喷射，可使氧化反应发生在比电荷累积机制所涉及的正电势更高的正电势下。位置选择性氧化也是空穴喷射的特征之一，并应用于超出衍射极限的光诱导纳米加工。将空穴注入到包括固态单元中的p型半导体（HTM）在内的空穴传输材料中，通过HTM进行空穴注入以稳定空穴，将空穴注入HTM以进行有效的热电子注入，通过使用热进行电压上转换还描述了载流子和电化学辅助的空穴喷射。