The global modeling of an unbiased/biased ungated high electron mobility transistor (HEMT) is presented. The complete hydrodynamic model is employed for the full-wave analysis of the structure, using the finite-difference time-domain numerical method. This model is based on the first three moments of the Boltzmann transport equation combined with Maxwell’s equations. Using the three moments of the transport equation, in contrast to the usual first two moments, allows us to take into account the variation of the transport parameters with the energy and the temperature. Therefore, the complete characteristics of the plasmons’ propagation along the ungated HEMT channel for low- and high-field conditions are achieved. Moreover, by applying this model to a metallic grating gate HEMT as a tunable resonant detector, the transmission spectra are obtained for various temperatures and electron densities for low- and high-field conditions. The results show the characteristics of the surface plasmons’ propagation are highly influenced by the excitation field level and accordingly cause transport parameter variations that can be described completely by our developed model.

中文翻译：

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使用完整的流体动力学模型对太赫兹等离子体高电子迁移率晶体管进行全局建模

提出了一个无偏/无偏的无电极高电子迁移率晶体管（HEMT）的全局建模。使用有限差分时域数值方法，将完整的流体动力学模型用于结构的全波分析。该模型基于玻尔兹曼输运方程式的前三个矩与麦克斯韦方程式的组合。与通常的前两个矩相比，使用输运方程式的三个矩可以使我们考虑到传递参数随能量和温度的变化。因此，获得了在低场和高场条件下，等离激元沿着无电极的HEMT通道传播的完整特征。此外，通过将此模型应用于金属栅栅极HEMT作为可调谐振检测器，在低场和高场条件下，获得了各种温度和电子密度的透射光谱。结果表明，表面等离激元的传播特性受激发场能级的影响很大，因此会引起传输参数的变化，这些变化可以用我们开发的模型完全描述。