Flexible strain‐sensitive‐material‐based sensors are desired owing to their widespread applications in intelligent robots, health monitoring, human motion detection, and other fields. High electrical–mechanical coupling behaviors of 2D materials make them one of the most promising candidates for miniaturized, integrated, and high‐resolution strain sensors, motivating to explore the influence of strain‐induced band‐gap changes on electrical properties of more materials and assess their potential application in strain sensors. Herein, a ternary SnSSe alloy nanosheet‐based strain sensor is reported showing an enhanced gauge factor (GF) up to 69.7 and a good reproducibility and linearity within strain of 0.9%. Such sensor holds high‐sensitive features under low strain, and demonstrates an improved sensitivity with a decrease in the membrane thickness. The high sensitivity is attributed to widening band gap and density of states reduction induced by strain, as verified by theoretical model and first‐principles calculations. These findings show that a sensor with adjustable strain sensitivity might be realized by simply changing the elemental constituents of 2D alloying materials.

中文翻译：

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用于柔性传感器的2D-SnSSe薄片的应变感应带隙调谐

基于柔性应变敏感材料的传感器由于其在智能机器人，健康监测，人体运动检测以及其他领域的广泛应用而受到人们的青睐。二维材料的高机电耦合性能使其成为小型化，集成化和高分辨率应变传感器的最有前途的候选者之一，从而激发了探索应变引起的带隙变化对更多材料的电学性质的影响并进行评估的动机。它们在应变传感器中的潜在应用。在本文中，据报道，三元SnSSe合金纳米片基应变传感器显示出高达69.7的增强的应变系数（GF）和0.9％的应变范围内良好的重现性和线性。这种传感器在低应变下具有高灵敏度特征，并随着膜厚度的减小而显示出更高的灵敏度。如理论模型和第一性原理计算所证实的，高灵敏度归因于带隙的扩大和应变引起的状态降低密度。这些发现表明，可以通过简单地改变2D合金材料的元素成分来实现可调节应变灵敏度的传感器。