Cation exchange synthesis of two-dimensional vertical Cu2S/CdS heterojunctions for photovoltaic device applications †,Journal of Materials Chemistry A

当前位置： X-MOL 学术 › J. Mater. Chem. A › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Cation exchange synthesis of two-dimensional vertical Cu2S/CdS heterojunctions for photovoltaic device applications †
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2019-11-28 , DOI: 10.1039/c9ta11304e
Yangyang Zhan _{1,

2,

3,

4,

5} , Zhibin Shao _{1,

2,

3,

4,

5} , Tianhao Jiang _{1,

2,

3,

4,

5} , Jing Ye _{1,

2,

3,

4,

5} , Xiaofeng Wu _{1,

2,

3,

4,

5} , Bingchang Zhang _{1,

2,

3,

4,

5} , Ke Ding _{1,

2,

3,

4,

5} , Di Wu _{6,

7,

8,

9,

10} , Jiansheng Jie _{1,

2,

3,

4,

5}

Affiliation

Two-dimensional (2D) vertical heterojunctions possess peculiar electronic and optoelectronic properties according to their complementary composition, ultrathin thickness, and unique geometry. However, it is still a challenge to synthesize 2D vertical heterojunctions based on non-layered materials due to strong covalent bonds and abundant surface dangling bonds. Here we developed a partial cation exchange method for the synthesis of 2D vertical Cu₂S/CdS heterojunctions. Large-size and single-crystalline CdS nanosheets prepared by a van der Waals epitaxy method served as host lattices for cation exchange reactions. The evolution of the nanosheets in terms of their morphology, composition and crystal structure was elaborately characterized. The as-prepared 2D vertical heterojunctions have two-layer ultra-thin structures and form large-area junctions at their interfaces. Under light irradiation, the photogenerated electron–hole pairs can be quickly separated under the electric field in the junction region, minimizing the possibility of charge recombination. As a result, the device based on 2D vertical Cu₂S/CdS heterojunctions exhibits a higher photoelectric conversion capability compared with the device based on single-component 2D CdS or Cu₂S Schottky junctions. Our work opens up opportunities to explore 2D vertical heterojunctions based on non-layered materials for high-performance optoelectronic devices.

中文翻译：

用于光伏器件应用的二维垂直Cu ₂ S / CdS异质结的阳离子交换合成†

二维（2D）垂直异质结具有互补的成分，超薄的厚度和独特的几何形状，具有独特的电子和光电特性。然而，由于强的共价键和丰富的表面悬空键，基于非分层材料合成二维垂直异质结仍然是一个挑战。在这里，我们开发了一种用于合成2D垂直Cu ₂的部分阳离子交换方法S / CdS异质结。通过范德华外延法制备的大尺寸和单晶CdS纳米片用作阳离子交换反应的主体晶格。从形态，组成和晶体结构方面对纳米片的演变进行了详尽的表征。所准备的2D垂直异质结具有两层超薄结构，并在其界面处形成大面积结。在光照射下，光生电子-空穴对可以在结区的电场下快速分离，从而最大程度地减少了电荷复合的可能性。结果，与基于单组分2D CdS或Cu ₂的器件相比，基于2D垂直Cu ₂ S / CdS异质结的器件具有更高的光电转换能力。S肖特基结。我们的工作为探索基于非分层材料的2D垂直异质结提供了机会，以用于高性能光电器件。

更新日期：2020-01-06

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11