Tailoring Quantum Tunneling in a Vanadium-Doped WSe2/SnSe2 Heterostructure.,Advanced Science

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Tailoring Quantum Tunneling in a Vanadium-Doped WSe2/SnSe2 Heterostructure.
Advanced Science ( IF 14.3 ) Pub Date : 2019-11-27 , DOI: 10.1002/advs.201902751
Sidi Fan _{1,

2} , Seok Joon Yun _{1,

2} , Woo Jong Yu ₃ , Young Hee Lee _{1,

2}

Affiliation

2D van der Waals layered heterostructures allow for a variety of energy band offsets, which help in developing valuable multifunctional devices. However, p-n diodes, which are typical and versatile, are still limited by the material choice due to the fixed band structures. Here, the vanadium dopant concentration is modulated in monolayer WSe2 via chemical vapor deposition to demonstrate tunable multifunctional quantum tunneling diodes by vertically stacking SnSe2 layers at room temperature. This is implemented by substituting tungsten atoms with vanadium atoms in WSe2 to provoke the p-type doping effect in order to efficiently modulate the Fermi level. The precise control of the vanadium doping concentration is the key to achieving the desired quantum tunneling diode behaviors by tuning the proper band alignment for charge transfer across the heterostructure. By constructing a p-n diode for p-type V-doped WSe2 and heavily degenerate n-type SnSe2, the type-II band alignment at low V-doping concentration is clearly shown, which evolves into the type-III broken-gap alignment at heavy V-doping concentration to reveal a variety of diode behaviors such as forward diode, backward diode, negative differential resistance, and ohmic resistance.

中文翻译：

在掺钒 WSe2/SnSe2 异质结构中定制量子隧道。

二维范德华层状异质结构允许各种能带偏移，这有助于开发有价值的多功能器件。然而，典型且通用的pn二极管由于固定的能带结构仍然受到材料选择的限制。在这里，通过化学气相沉积在单层 WSe2 中调节钒掺杂剂浓度，以通过在室温下垂直堆叠 SnSe2 层来演示可调谐多功能量子隧道二极管。这是通过用 WSe2 中的钒原子取代钨原子来激发 p 型掺杂效应，从而有效地调节费米能级来实现的。钒掺杂浓度的精确控制是通过调整异质结构上电荷传输的正确能带排列来实现所需量子隧道二极管行为的关键。通过构建p型V掺杂WSe2和重简并n型SnSe2的pn二极管，清楚地显示了低V掺杂浓度下的II型能带排列，在重掺杂浓度下演变成III型破带排列。 V 掺杂浓度可揭示各种二极管行为，例如正向二极管、反向二极管、负微分电阻和欧姆电阻。

更新日期：2019-11-28

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