Abstract Combining different phase structure materials with unique properties to design novel devices plays a significant role in the development of modern electronics. Here, we explore the characteristics of this type of complex interface and epitaxy structures based on the coupling between hexagonal ZnO film and cubic MgO substrate. The ZnO film was prepared by the molecular beam epitaxy technique on the MgO ( 0 1 1 ) substrate. The analysis results from the in situ reflection high energy electron diffraction patterns, X-ray diffraction (XRD)-pole figures and high resolution transmission electron microscopy images demonstrate that the film exhibits two-fold symmetry domains with a growth direction deviated from c-axis at about 31° along the [ 0 1 0 ] MgO or [ 0 1 ¯ 0 ] MgO azimuth. Despite the intertwined diffusion from Zn and Mg atoms in the interface, which is the possible origin of a blue shift of about 0.083 eV in the Photoluminescence (PL) spectrum, the inclined film shows a full width at half maximum value that is close to the reported value from the high quality film. This work hopefully provides useful insights to the design and exploration of the novel optoelectronic devices that involve the integration of materials with different structure and different properties.

中文翻译：

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(011)-MgO衬底上倾斜ZnO薄膜的界面结构具有类体光学特性

摘要 结合具有独特性能的不同相结构材料设计新型器件在现代电子学的发展中具有重要作用。在这里，我们基于六方 ZnO 薄膜和立方 MgO 衬底之间的耦合探索了这种复杂界面和外延结构的特征。采用分子束外延技术在MgO ( 0 1 1 )衬底上制备ZnO薄膜。原位反射高能电子衍射图、X 射线衍射 (XRD) 极图和高分辨率透射电子显微镜图像的分析结果表明，该薄膜表现出双重对称域，生长方向偏离 c 轴在大约 31° 沿 [ 0 1 0 ] MgO 或 [ 0 1 ¯ 0 ] MgO 方位角。尽管界面中 Zn 和 Mg 原子交织扩散，这可能是光致发光 (PL) 光谱中约 0.083 eV 蓝移的起源，但倾斜膜显示出接近于高品质薄膜的报告价值。这项工作有望为涉及不同结构和不同性质材料集成的新型光电器件的设计和探索提供有用的见解。