Abstract Owing to a large bandgap, extreme thermal-mechanical properties, and close lattice matching, beryllium oxide (BeO) is an ideal substrate and dielectric material for diamond based electronic devices. In this regard, we have utilized X-ray photoemission spectroscopy (XPS) to determine the valence band offset (VBO) between atomic layer deposited (ALD) BeO and nano-crystalline diamond (nc-D). The BeO VBO with nc-D was determined to be 1.8 ± 0.1 eV. Utilizing the reported band gaps for ALD BeO (8.0 eV) and diamond (5.5 eV), the calculated conduction band offset at the BeO/nc-D interface was determined to be 0.7 ± 0.2 eV. The measured BeO/nc-D band offsets are accordingly ideal for high-power, −temperature, −frequency, and nuclear detection device applications based on diamond technology.

中文翻译：

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氧化铍-金刚石界面价带偏移的X射线光电子能谱研究

摘要 氧化铍 (BeO) 具有大带隙、极高的热机械性能和紧密的晶格匹配，是金刚石基电子器件的理想基板和介电材料。在这方面，我们利用 X 射线光电子能谱 (XPS) 来确定原子层沉积 (ALD) BeO 和纳米晶金刚石 (nc-D) 之间的价带偏移 (VBO)。带有 nc-D 的 BeO VBO 被确定为 1.8 ± 0.1 eV。利用所报告的 ALD BeO (8.0 eV) 和金刚石 (5.5 eV) 的带隙，计算出的 BeO/nc-D 界面处的导带偏移为 0.7 ± 0.2 eV。因此，测得的 BeO/nc-D 带偏移非常适合基于金刚石技术的高功率、-温度、-频率和核检测设备应用。