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Integrated gallium phosphide nonlinear photonics
Nature Photonics ( IF 32.3 ) Pub Date : 2019-11-25 , DOI: 10.1038/s41566-019-0537-9
Dalziel J. Wilson , Katharina Schneider , Simon Hönl , Miles Anderson , Yannick Baumgartner , Lukas Czornomaz , Tobias J. Kippenberg , Paul Seidler

Gallium phosphide (GaP) is an indirect-bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties—including large χ(2) and χ(3) coefficients, a high refractive index (>3) and transparency from visible to long-infrared wavelengths (0.55–11 μm)—its application as an integrated photonics material has been little studied. Here, we introduce GaP-on-insulator as a platform for nonlinear photonics, exploiting a direct wafer-bonding approach to realize integrated waveguides with 1.2 dB cm−1 loss in the telecommunications C-band (on par with Si-on-insulator). High-quality (Q > 105), grating-coupled ring resonators are fabricated and studied. Employing a modulation transfer approach, we obtain a direct experimental estimate of the nonlinear index of GaP at telecommunication wavelengths: n2 = 1.1(3) × 10−17 m2 W−1. We also observe Kerr frequency comb generation in resonators with engineered dispersion. Parametric threshold powers as low as 3 mW are realized, followed by broadband (>100 nm) frequency combs with sub-THz spacing, frequency-doubled combs and, in a separate device, efficient Raman lasing. These results signal the emergence of GaP-on-insulator as a novel platform for integrated nonlinear photonics.



中文翻译:

集成磷化镓非线性光子学

磷化镓(GaP)是一种间接带隙半导体,广泛用于固态照明中。尽管具有众多吸引人的光学特性,包括较大的χ (2)χ (3)系数,高折射率(> 3)以及从可见光到长红外波长(0.55–11μm)的透明性,但它还是作为集成光子材料应用的很少研究。在这里,我们将绝缘体上的GaP引入到非线性光子学平台中,利用直接晶片键合方法实现电信C波段中损耗为1.2 dB cm -1的集成波导(与绝缘体上硅相当) 。高质量(Q  > 10 5),制造并研究了光栅耦合环形谐振器。使用调制传递方法,我们获得了在电信波长下GaP非线性指数的直接实验估计:n 2  = 1.1(3)×10 -17  m 2  W -1。我们还观察到具有工程色散的谐振器中Kerr频率梳的产生。实现了低至3 mW的参数阈值功率,随后是具有亚太赫兹间隔的宽带(> 100 nm)频率梳,倍频梳,以及在单独的设备中实现高效的拉曼激射。这些结果表明,绝缘体上GaP的出现成为了集成非线性光子学的新型平台。

更新日期:2019-11-26
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