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Estimation of electron and hole mobility of 50 homogeneous fullerene amorphous structures (C60, C58B2, C58N2 and C58NB) using Marcus theory corrected by percolation model
Organic Electronics ( IF 2.7 ) Pub Date : 2019-11-21 , DOI: 10.1016/j.orgel.2019.105571
Alexander Goldberg , H. Shaun Kwak , Mathew D. Halls , Nobuyuki N. Matsuzawa , Masaru Sasago , Hideyuki Arai , Eiji Fujii

Carrier mobility is one of the important characteristics of organic semiconductors. Materials with improved charge mobility are currently in a high demand. This study pertains to boron and nitrogen substituted fullerenes, the material with a high potential application in the optoelectronic devices. In our exploration, 50 fullerenes were investigated; 23 isomers of C58B2 and C58N2 and 3 selected isomers of C58BN. The distinguished 23 isomers represent all possible combinations of substitution of two carbon atoms with the same element in C60. Three C58BN molecules represent isomers in close proximity and at the antipodal positions of the fullerene. Owing to recent advances in computer hardware, large scale quantum chemical and molecular dynamics simulations became feasible. Charge transport properties calculations were based on the Marcus approximation. Using density functional theory approach and molecular dynamics simulations, the charge hopping rate as defined in Marcus equation can be obtained. It can further be applied to calculate mobility as proposed by Deng and Goddard together with percolation correction. C58B2 compounds on average have higher charge mobilities than C58N2 ones. Five C58B2 and two C58N2 molecules have better electron mobility than C60. Many more compounds outperform C60 for hole mobility. The highest electron mobility is predicted for one of the C58B2 isomers, that is two times higher than that for C60. For hole mobility, one of the C58BN isomers exhibited mobility that is almost four times larger than that for C60.



中文翻译:

利用渗流模型校正的Marcus理论估算50种均质富勒烯非晶态结构(C 60,C 58 B 2,C 58 N 2和C 58 NB)的电子和空穴迁移率

载流子迁移率是有机半导体的重要特征之一。当前对具有改善的电荷迁移率的材料有很高的需求。这项研究涉及硼和氮取代的富勒烯,这种材料在光电器件中具有很高的应用潜力。在我们的探索中,研究了50种富勒烯。C 58 B 2和C 58 N 2的23种异构体和C 58 BN的3种选择的异构体。杰出的23种异构体代表两个碳原子在C 60中被相同元素取代的所有可能组合。三C 58BN分子代表在富勒烯附近和对映体位置的异构体。由于计算机硬件的最新发展,大规模的量子化学和分子动力学模拟变得可行。电荷传输性质的计算基于马库斯近似值。使用密度泛函理论方法和分子动力学模拟,可以获得Marcus方程中定义的电荷跳跃率。它可以进一步用于计算邓(Deng)和戈达德(Goddard)提出的迁移率以及渗流校正。C 58 B 2化合物平均比C 58 N 2具有更高的电荷迁移率。五个C 58 B 2和两个C 58N 2分子具有比C 60更好的电子迁移率。在空穴迁移率方面,还有更多的化合物优于C 60。预测到C 58 B 2异构体之一的最高电子迁移率,比C 60的电子迁移率高两倍。对于空穴迁移率,C 58 BN异构体之一的迁移率几乎是C 60的四倍。

更新日期:2019-11-22
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