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Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2019-11-19 , DOI: 10.1002/pip.3215 Makoto Konagai 1 , Ryo Sasaki 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2019-11-19 , DOI: 10.1002/pip.3215 Makoto Konagai 1 , Ryo Sasaki 1
Affiliation
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Hydrogenated amorphous Si(a‐Si:H) quintuple‐junction solar cells, which consist of a‐SiOx:H/a‐SiOx:H/a‐Si:H/a‐SiOx:H/a‐SiOx:H, were fabricated by plasma CVD method. The total thickness was 0.6‐0.8 μm. Irradiation intensity (Pin) dependence of the open circuit voltage (Voc) of quintuple‐junction solar cells was measured. The decreasing amount ΔVoc (1/10) of the open‐circuit voltage when the irradiation intensity became 1/10 was 62mV/cell. Voc drops rapidly from around the irradiation intensity of 1mW/cm2 (approximately 1,000 lux). This large Voc reduction is due to leakage current. Then, we discussed the origin of the leakage current, and, finally, by improving the leakage current, a very high open‐circuit voltage Voc of 3.5 V was demonstrated under LED light illumination. Furthermore, we theoretically analyzed Voc as a function of the irradiation intensity, including effects of the leakage current and the film quality of i‐a‐Si(O):H. It was found from the simulation results that it is necessary to increase the shunt resistance Rsh and to lower the defect density of i‐a‐Si(O):H in order to obtain a sufficient Voc‐Pin characteristics for IoT devices application under low illuminance.
中文翻译：
用于低照度下3.5V高开路电压的IoT设备的双面非晶硅五结太阳能电池
氢化非晶Si（a-Si：H）五结太阳能电池，由a-SiO x：H / a-SiO x：H / a-Si：H / a-SiO x：H / a-SiO x组成：H，是通过等离子CVD法制造的。总厚度为0.6-0.8μm。测量了五结太阳能电池的开路电压（V oc）与辐射强度（Pin）的关系。的减少量ΔV OC（1/10）时的照射强度成为1/10开路电压的为62mV /细胞。Voc从1mW / cm 2（约1,000 lux）的辐照强度附近迅速下降。这个大VOC减少是由于漏电流引起的。然后，我们讨论了泄漏电流的来源，最后，通过改善泄漏电流，在LED照明下证明了3.5 V的很高的开路电压V oc。此外，我们从理论上分析了Voc作为辐照强度的函数，包括泄漏电流和i-a-Si（O）：H薄膜质量的影响。从仿真结果中发现，有必要增加分流电阻Rsh并降低i-a-Si（O）：H的缺陷密度，以便在低温度下为物联网设备应用获得足够的Voc - Pin特性照度。
更新日期：2019-11-19
中文翻译：
用于低照度下3.5V高开路电压的IoT设备的双面非晶硅五结太阳能电池
氢化非晶Si（a-Si：H）五结太阳能电池，由a-SiO x：H / a-SiO x：H / a-Si：H / a-SiO x：H / a-SiO x组成：H，是通过等离子CVD法制造的。总厚度为0.6-0.8μm。测量了五结太阳能电池的开路电压（V oc）与辐射强度（Pin）的关系。的减少量ΔV OC（1/10）时的照射强度成为1/10开路电压的为62mV /细胞。Voc从1mW / cm 2（约1,000 lux）的辐照强度附近迅速下降。这个大VOC减少是由于漏电流引起的。然后，我们讨论了泄漏电流的来源，最后，通过改善泄漏电流，在LED照明下证明了3.5 V的很高的开路电压V oc。此外，我们从理论上分析了Voc作为辐照强度的函数，包括泄漏电流和i-a-Si（O）：H薄膜质量的影响。从仿真结果中发现，有必要增加分流电阻Rsh并降低i-a-Si（O）：H的缺陷密度，以便在低温度下为物联网设备应用获得足够的Voc - Pin特性照度。
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