Multifield‐Inspired Tunable Carrier Effects Based on Ferroelectric‐Silicon PN Heterojunction,Advanced Electronic Materials

当前位置： X-MOL 学术 › Adv. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Multifield‐Inspired Tunable Carrier Effects Based on Ferroelectric‐Silicon PN Heterojunction
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-11-18 , DOI: 10.1002/aelm.201900795
Jing Lou ₁ , Hua Ma ₁ , Jun Wang ₁ , Ruisheng Yang ₂ , Bowen Dong ₁ , Ying Yu ₁ , Jiafu Wang ₁ , Fuli Zhang ₂ , Yuancheng Fan ₂ , Mingde Feng ₁ , Zhiqiang Li ₁ , Cewen Nan ₃ , Shaobo Qu ₁

Affiliation

Tuning the carrier behavior in a heterostructure is important for designing well‐performing electro‐optical devices. Scientific research has mainly focused on 2D and layered materials due to their high carrier mobility. Ferroelectrics exhibit a strong response to external fields and are widely employed in microwave and terahertz (THz) tunable devices. By constructing a ferroelectric‐silicon PN heterojunction, a new strategy is proposed to construct a nonequilibrium carrier layer and achieve tunable carrier effects under multifield coupling. Theoretically, the formation of a carrier layer based on the interaction between free carriers and bound surface charges is analyzed, and a design method for PN heterojunction engineering is presented. Experimentally, a PN heterojunction of Ba_0.7Sr_0.3TiO₃ thin film on silicon substrate is constructed, and three tunable carrier effects are achieved. A broadband tunable THz modulator with an amplitude modulation depth of 99.5% is realized, which is superior to other works. The volt–ampere effect of the PN heterojunction can be dynamically adjusted. The shape of the hysteresis loops can be dynamically controlled in real time. This proposed strategy for carrier modulation is a giant step forward in ferroelectrics applications and a path for the development of electro‐optical applications with new materials.

中文翻译：

基于铁电-硅PN异质结的多场启发式可调谐载流子效应

调整异质结构中的载流子性能对于设计性能良好的光电器件很重要。由于其高的载流子迁移率，科学研究主要集中在2D和分层材料上。铁电体对外部电场表现出强烈的响应，并广泛用于微波和太赫兹（THz）可调设备中。通过构造铁电硅PN异质结，提出了一种新的策略来构造非平衡载流子层并在多场耦合下实现可调节的载流子效应。从理论上分析了基于自由载流子和结合的表面电荷之间相互作用的载流子层的形成，提出了一种PN异质结工程的设计方法。实验上，Ba _0.7 Sr _0.3的PN异质结在硅衬底上构建了TiO ₃薄膜，并实现了三种可调载流子效应。实现了幅度调制深度为99.5％的宽带可调谐太赫兹调制器，优于其他工作。PN异质结的伏安效应可以动态调整。磁滞回线的形状可以实时动态控制。提出的载流子调制策略是铁电应用领域的一大进步，也是用新材料开发光电应用的途径。

更新日期：2020-02-13

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11