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Adding a new layer to ‘more than Moore’
Nature Electronics ( IF 33.7 ) Pub Date : 2019-11-18 , DOI: 10.1038/s41928-019-0329-8
Hendrik Faber , Thomas D. Anthopoulos

Silicon circuits with increased functionality and device density can be created by directly integrating amorphous oxide semiconductor devices on top of them.

中文翻译:

为“不仅仅是摩尔”添加新层

通过将非晶氧化物半导体器件直接集成在其顶部,可以创建功能性和器件密度更高的硅电路。
更新日期:2019-11-18
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