Wireless device technology operating in the millimetre-wave regime (30 to 300 GHz) increasingly needs to offer both high performance and a high level of integration with complementary metal–oxide–semiconductor (CMOS) technology. Aligned carbon nanotubes are proposed as an alternative to III–V technologies in such applications because of their highly linear signal amplification and compatibility with CMOS. Here we report the wafer-scalable fabrication of aligned carbon nanotube field-effect transistors operating at gigahertz frequencies. The devices have gate lengths of 110 nm and are capable, in distinct devices, of an extrinsic cutoff frequency and maximum frequency of oscillation of over 100 GHz, which surpasses the 90 GHz cutoff frequency of radio-frequency CMOS devices with gate lengths of 100 nm and is close to the performance of GaAs technology. Our devices also offer good linearity, with distinct devices capable of a peak output third-order intercept point of 26.5 dB when normalized to the 1 dB compression power, and 10.4 dB when normalized to d.c. power.

在毫米波范围（30至300 GHz）中运行的无线设备技术越来越需要与互补金属氧化物半导体（CMOS）技术一起提供高性能和高集成度。由于这种高度线性的信号放大和与CMOS的兼容性，因此建议将取向碳纳米管替代III-V技术用于此类应用。在这里，我们报告了在千兆赫兹频率下运行的可对准碳纳米管场效应晶体管的晶圆可缩放制造。这些设备的栅极长度为110 nm，并且在不同的设备中能够提供外部截止频率和超过100 GHz的最大振荡频率，它超过了栅极长度为100 nm的射频CMOS器件的90 GHz截止频率，并且接近GaAs技术的性能。我们的设备还具有良好的线性度，与众不同的设备在归一化为1 dB压缩功率时能够达到26.5 dB的峰值输出三阶交调点，而在归一化为DC功率时能够达到10.4 dB的峰值。