To achieve the highest integration density, a one‐selector one‐resistor (1S1R) structure is essential because of its smallest feature size in crossbar arrays. However, the complexity of structure and poor stability of the 1S1R property has seriously hampered its development. A multi‐functional controllable device with simple Pt/NbO_x/TiN structure is fabricated and exhibits excellent 1S1R characteristics and threshold switching properties, which is suitable for integration due to the reduced leakage current. Meanwhile, two modes of 1S1R characteristics are found and discussed in detail, which is beneficial to understand the degeneration of 1S1R property. Furthermore, finite element analysis is utilized to analyze and provide further support for the multi‐behaviors. A multi‐functional device is demonstrated and the multi‐behavior mechanisms are explained, which is helpful to promote the application of 3D storage technology.

中文翻译：

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基于单氧化铌层的3D集成多功能可控存储设备

为了实现最高的集成密度，单选单电阻（1S1R）结构是必不可少的，因为它在交叉开关阵列中具有最小的特征尺寸。但是，结构的复杂性和1S1R属性的较差的稳定性严重阻碍了其发展。具有简单Pt / NbO _x的多功能可控设备制成的/ TiN结构具有出色的1S1R特性和阈值开关特性，由于漏电流减小，因此适合集成。同时，找到并详细讨论了1S1R特性的两种模式，这有助于理解1S1R特性的退化。此外，有限元分析可用于分析多行为，并为其提供进一步支持。演示了一种多功能设备，并解释了多种行为机制，这有助于促进3D存储技术的应用。