Abstract Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pre-treatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy.

中文翻译：

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在单晶碳化硅衬底上沉积金刚石薄膜

摘要 碳化硅 (SiC) 是一种宽带隙材料，它正在缓慢但稳定地宣称自己是高温电子应用中硅 (Si) 的可靠替代品，尤其是电动汽车行业。使用金刚石薄膜钝化 SiC 器件有望降低泄漏电流并避免器件过早击穿，从而产生更高效的器件。然而，为了有效钝化，两种材料之间的界面需要几乎没有空隙，并且从生长的第一阶段就需要高质量的金刚石薄膜。为了评估沉积和晶种参数对沉积物性能的影响，通过热丝化学气相沉积 (HFCVD) 在 SiC 衬底上沉积金刚石薄膜。在晶种步骤之前，将基板暴露于金刚石生长条件（预处理 PT），并使用爆炸纳米金刚石 (DND) 颗粒溶液和 6-12 和 40-60 μm 砂粒进行晶种。然后在不同温度和不同甲烷浓度下生长金刚石薄膜，并在扫描电子显微镜 (SEM) 中观察沉积物；它们的质量通过拉曼光谱进行评估。