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Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-11-14 , DOI: 10.1002/aelm.201900979 Pingping Zhuang 1, 2 , Weiyi Lin 1, 2 , Jaehyun Ahn 2 , Massimo Catalano 3 , Harry Chou 2 , Anupam Roy 2 , Manuel Quevedo‐Lopez 3 , Luigi Colombo 3 , Weiwei Cai 1 , Sanjay K. Banerjee 2
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-11-14 , DOI: 10.1002/aelm.201900979 Pingping Zhuang 1, 2 , Weiyi Lin 1, 2 , Jaehyun Ahn 2 , Massimo Catalano 3 , Harry Chou 2 , Anupam Roy 2 , Manuel Quevedo‐Lopez 3 , Luigi Colombo 3 , Weiwei Cai 1 , Sanjay K. Banerjee 2
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Resistive switching (RS) induced by electrical bias is observed in numerous materials, including 2D hexagonal boron nitride (hBN), which has been used in resistive random access memories (RRAMs) in recent years. For practical high‐density, cross‐point memory arrays, compared with bipolar memories, nonpolar (or unipolar) devices are preferable in terms of peripheral circuit design and storage density. The non‐volatile nonpolar RS phenomenon of hBN‐based RRAMs with Ti/hBN/Au structure as a prototype is reported. Stable manual DC switching for ≈103 cycles with an average window over five orders of magnitude is demonstrated. After identifying a possible mechanism related to the Joule heat that contributes to the rupture of conductive filaments in nonpolar RS operations, this mechanism is validated by analyzing the occurrence of the “Re‐set” process. Though the intriguing physical origin still requires more comprehensive studies, the achievement of nonpolar RS should make it more feasible to use hBN in practical RRAM technology.
中文翻译：
多层基于hBN的存储器的非极性电阻切换
在许多材料中都观察到由电偏压引起的电阻切换（RS），包括2D六方氮化硼（hBN），近年来已在电阻随机存取存储器（RRAM）中使用。对于实用的高密度交叉点存储阵列，与双极性存储器相比，就外围电路设计和存储密度而言，非极性（或单极性）器件是更可取的。报告了以Ti / hBN / Au结构为原型的基于hBN的RRAM的非易失性非极性RS现象。为≈10稳定手动DC开关3展示了平均窗口超过五个数量级的循环。在确定了与焦耳热有关的可能机制，该机制在非极性RS操作中导致了导电细丝的破裂，然后通过分析“重置”过程的发生来验证该机制。尽管有趣的物理起源仍然需要更全面的研究，但非极性RS的成就应该使在实际RRAM技术中使用hBN更加可行。
更新日期：2020-01-13
中文翻译：
多层基于hBN的存储器的非极性电阻切换
在许多材料中都观察到由电偏压引起的电阻切换（RS），包括2D六方氮化硼（hBN），近年来已在电阻随机存取存储器（RRAM）中使用。对于实用的高密度交叉点存储阵列，与双极性存储器相比，就外围电路设计和存储密度而言，非极性（或单极性）器件是更可取的。报告了以Ti / hBN / Au结构为原型的基于hBN的RRAM的非易失性非极性RS现象。为≈10稳定手动DC开关3展示了平均窗口超过五个数量级的循环。在确定了与焦耳热有关的可能机制，该机制在非极性RS操作中导致了导电细丝的破裂，然后通过分析“重置”过程的发生来验证该机制。尽管有趣的物理起源仍然需要更全面的研究，但非极性RS的成就应该使在实际RRAM技术中使用hBN更加可行。
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